Submicrometer InAlAs/InGaAs Double-Gate HEMT’s on Transferred Substrate

Autor: Wichmann, N., Duszynski, I., Parenty, T., Bollaert, S., Mateos, J., Wallart, X., Cappy, A.

Publikováno v: Wichmann, N. ; Duszynski, I. ; Parenty, T. ; Bollaert, S. ; Mateos, J. ; Wallart, X. ; Cappy, A. (2004) Submicrometer InAlAs/InGaAs Double-Gate HEMT’s on Transferred Substrate. In: Gallium Arsenide applications symposium. GAAS 2004, 11—12 Ottobre, Amsterdam.

This paper reports fabrication, DC and RF characterization of the In0.52Al0.48As/In0.53Ga0.47As doublegate HEMTs with sub-micron gate lengths. These devices present a maximum extrinsic transconductance gm of 2650 mS/mm with a corresponding drain curr

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::24bd8b4a9e510a08a3b6559ce932c64f

100-nm T-gate In0.53Ga0.47As-In0.52Al0.48As DG-HEMTs with two separate gate controls

Autor: Wichmann, N., Duszynski, I., Wallart, X., Bollaert, S., Cappy, A.

Publikováno v: IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2005, 26, pp.601-603
IEEE Electron Device Letters, 2005, 26, pp.601-603

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::258132979f4335427cd9319439aeb24d
https://hal.archives-ouvertes.fr/hal-00125132

Réalisation de transistors HEMTs AlInAs/GaInAs de 20nm de longueur de grille

Autor: Duszynski, I., Wichmann, N., Bollaert, S., Wallart, X., Cappy, A.

Publikováno v: Actes des 14èmes Journées Nationales Microondes
Actes des 14èmes Journées Nationales Microondes, 2005, Nantes, France

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::1a0464f907999973551bb5eb2521b082
https://hal.archives-ouvertes.fr/hal-00126727

Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls

Autor: Wichmann, N., Duszynski, I., Wallart, X., Bollaert, S., Cappy, A.

Publikováno v: IEEE Electron Device Letters
IEEE Electron Device Letters, 2005, 26, pp.601-603
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2005, 26, pp.601-603

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::395f8c9d0656e0bd30f59dd63739c31c
https://hal.science/hal-00154894

InAlAs/InGaAs double gate HEMTS with high extrinsic transconductance

Autor: Wichmann, N., Duszynski, I., Parenty, T., Bollaert, S., Mateos, J., Wallart, X., Cappy, A.

Publikováno v: Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM-IEEE

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6efd26cf83f9666855f5ba54608d3445
https://hal.archives-ouvertes.fr/hal-00133877