Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Dustin Kendig"'
Publikováno v:
2022 21st IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (iTherm).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb5c355793178fb6681dad7936bd66b0
https://doi.org/10.1109/itherm54085.2022.9899680
https://doi.org/10.1109/itherm54085.2022.9899680
Autor:
Dustin Kendig, Samuel Graham, Chien-Fong Lo, Luke Yates, Banafsheh Barabadi, Hugues Marchand, Georges Pavlidis
Publikováno v:
IEEE Transactions on Electron Devices. 67:822-827
Superlattice (SL) structures have been used to reduce the stress in the GaN epilayer of high-electron-mobility transistors (HEMTs). This has led to an improvement in their properties such as the breakdown voltage. The increase in thermal resistance a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fa1321ff234fbabde163450d3792ec8
https://doi.org/10.1109/ted.2020.2964408
https://doi.org/10.1109/ted.2020.2964408
Publikováno v:
IEEE Transactions on Electron Devices. 65:1753-1758
The development of steady-state thermal characterization techniques for AlGaN/GaN high-electron mobility transistors (HEMTs) has been used to measure the device’s peak temperature under DC conditions. Despite these methods enabling the accurate qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b908117c8f7bab89931cdcdb3dd1f74
https://doi.org/10.1109/ted.2018.2818621
https://doi.org/10.1109/ted.2018.2818621
Publikováno v:
MRS Advances. 2:3613-3618
Thermal characterization of nano-featured devices is a critical challenge for the development of high performance devices. Although far-field thermoreflectance imaging is limited in spatial resolution by the optical diffraction limit, it is more amen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b8f057c933ac7d74cf689a32fabce09
https://doi.org/10.1557/adv.2017.438
https://doi.org/10.1557/adv.2017.438
For reliability predictions, gallium nitride transistors require accurate estimations of the peak operating temperatures within the device. This article presents a new application of thermoreflectance-based temperature measurements performed on a gal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f7034f1eb13e3f2f7c0f3c912a3be34
https://surrey.eprints-hosting.org/853825/
https://surrey.eprints-hosting.org/853825/
Autor:
Hyungtak Kim, Canberk Dundar, Eric R. Heller, Nazli Donmezer, Thomas E. Beechem, Dustin Kendig, Bikramjit Chatterjee, Sukwon Choi
Self-heating in AlGaN/GaN high electron mobility transistors (HEMTs) negatively impacts device performance and reliability. Under nominal operating conditions, a hot-spot in the device channel develops under the drain side corner of the gate due to a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f35041b641c6d23e94dc5f4fde8c56e
https://aperta.ulakbim.gov.tr/record/6751
https://aperta.ulakbim.gov.tr/record/6751
Autor:
Michael Gurr, Justin Reiter, Samuel Graham, Stephen Huerster, Ali Shakouri, David H. Altman, Dustin Kendig, Georges Pavlidis
Publikováno v:
2018 91st ARFTG Microwave Measurement Conference (ARFTG).
Shrinking features and growing device complexity in advanced microwave devices has increased the challenge of fully understanding device thermal behavior on the sub-micron scale. Predicting the device static and dynamic thermal behavior is essential
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55fd7836c45751195acfed2782765820
https://doi.org/10.1109/arftg.2018.8423808
https://doi.org/10.1109/arftg.2018.8423808
Autor:
Hans-Joachim Schulze, Riteshkumar Bhojani, Dustin Kendig, Franz-Josef Niedernostheide, Jens Kowalsky, Roman Baburske, Josef Lutz
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this paper, we demonstrate for the first time experimentally measured current filaments in IGBTs under repetitive Short-Circuit (SC) events. These current filaments were discovered with the help of Thermo-Reflectance Microscopy (TRM). The destruct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cfe8d65c80c4d9b220a53d3d692e7be
https://doi.org/10.1109/ispsd.2018.8393628
https://doi.org/10.1109/ispsd.2018.8393628
Publikováno v:
2018 17th IEEE Intersociety Conference on Thermal and Thermomechanical Phenomena in Electronic Systems (ITherm).
Transient thermoreflectance imaging (TTI) is a thermometry technique employed to map the surface temperature distribution of GaN HEMTs. The accuracy of the technique is dependent on applying the correct thermoreflectance coefficient to the region of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28b50f1315903fdba600c5b4506a0cec
https://doi.org/10.1109/itherm.2018.8419649
https://doi.org/10.1109/itherm.2018.8419649