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This paper investigates the leakage current, static noise margin (SNM), delay and energy consumption of a 6 transistor FinFET based static random-access memory (SRAM) cell due to the variation in design and operating parameters of the SRAM cell. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09d62f017896f2fe600bc31dde2505a6
