Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Durgesh Laxman Tiwari"'
Autor:
K. Sivasankaran, Durgesh Laxman Tiwari
Publikováno v:
Journal of Electronic Materials. 49:551-558
This paper presents the negative differential resistance (NDR) behavior of an MoS2 armchair nanoribbon double-gate field effect transistor. The large peak-to-valley current ratio (PVCR) of 2.58 × 102 with a peak current value of − 0.8 μA is achie
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6711138a00c6bec9ec67d527e65d402b
https://doi.org/10.1007/s11664-019-07806-2
https://doi.org/10.1007/s11664-019-07806-2
Autor:
Durgesh Laxman Tiwari, K. Sivasankaran
Publikováno v:
Superlattices and Microstructures. 130:38-49
This paper presents the impact of drain carrier density on the drain current saturation of 5 nm channel length double gate graphene nanoribbon field effect transistor (DGGNR-FET) near high drain voltage region. The impact of the substrate and energy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8c19024db757f1d38292800dd3d439a
https://doi.org/10.1016/j.spmi.2019.04.019
https://doi.org/10.1016/j.spmi.2019.04.019
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 13:687-692
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fc4b77f86c1488f96f03b0e211e3b4d
https://doi.org/10.1166/jno.2018.2262
https://doi.org/10.1166/jno.2018.2262
Autor:
K. Sivasankaran, Durgesh Laxman Tiwari
Publikováno v:
Superlattices and Microstructures. 113:244-254
In this paper, we investigate the graphene field effect transistor (G-FET) to enhance the drain current saturation and to minimize the drain conductance (gd) using numerical simulation. This work focus on suppressing the drain conductance using silic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58ac6a53d33d56943fd1982885a86736
https://doi.org/10.1016/j.spmi.2017.11.004
https://doi.org/10.1016/j.spmi.2017.11.004
Autor:
K. Sivasankaran, Durgesh Laxman Tiwari
Publikováno v:
Superlattices and Microstructures. 136:106308
This paper presents the negative differential resistance (NDR) behavior of double gate graphene field effect transistor. The channel length of the device is considered as 4 nm and source/drain regions are doped with nitrogen atoms. The carrier transp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c197d8ac103d53db704d8221c863f3df
https://doi.org/10.1016/j.spmi.2019.106308
https://doi.org/10.1016/j.spmi.2019.106308
Autor:
Taraprasanna Saha Babu, J. P. Raina, Anita Sagadevan Ethiraj, Durgesh Laxman Tiwari, Penchalaiah Palla, Hasan Raza Ansari
Publikováno v:
AIP Conference Proceedings.
To make use of exceptional properties of graphene in Field effect Transistor (FETs) for switching devices a band gap must be introduced in order to switch -off the device. Through periodic nano perforations a semi-metallic graphene is converted into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::074b9ee8e50469ec85690ea13017c106
https://doi.org/10.1063/1.4946555
https://doi.org/10.1063/1.4946555
Autor:
K. Sivasankaran, Durgesh Laxman Tiwari
Publikováno v:
International Journal of Nanoscience. 17:1760016
This paper presents improved performance of Double Gate Graphene Nanomesh Field Effect Transistor (DG-GNMFET) with h-BN as substrate and gate oxide material. The DC characteristics of 0.95[Formula: see text][Formula: see text]m and 5[Formula: see tex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc5fc39e7f90326589b91cce32267e23
https://doi.org/10.1142/s0219581x1760016x
https://doi.org/10.1142/s0219581x1760016x