Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Durgadevi Elamaran"'
Autor:
Durgadevi Elamaran, Ko Akiba, Hiroaki Satoh, Amit Banerjee, Norihisa Hiromoto, Hiroshi Inokawa
Publikováno v:
Nanomaterials, Vol 14, Iss 2, p 225 (2024)
This study demonstrates the conversion of metallic titanium (Ti) to titanium oxide just by conducting electrical current through Ti thin film in vacuum and increasing the temperature by Joule heating. This led to the improvement of electrical and the
Externí odkaz:
https://doaj.org/article/19630b2c514b406294596afda2bdb3c3
Autor:
Sankar Ganesh Ramaraj, Srijita Nundy, Pin Zhao, Durgadevi Elamaran, Asif Ali Tahir, Yasuhiro Hayakawa, Manoharan Muruganathan, Hiroshi Mizuta, Sang-Woo Kim
Publikováno v:
ACS Omega, Vol 7, Iss 12, Pp 10492-10501 (2022)
Externí odkaz:
https://doaj.org/article/cb45a026718c4392b4a4435a3ffd1acf
Autor:
Durgadevi Elamaran, Yuya Suzuki, Hiroaki Satoh, Amit Banerjee, Norihisa Hiromoto, Hiroshi Inokawa
Publikováno v:
Micromachines, Vol 11, Iss 8, p 718 (2020)
Assuming that the 0.6-μm silicon-on-insulator (SOI) complementary metal–oxide–semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-channel and p-channel), p
Externí odkaz:
https://doaj.org/article/30a17b956d92436f807631545783539f
Autor:
Ruifeng Yue, Sankar Ganesh Ramaraj, Hailong Liu, Durgadevi Elamaran, Vidya Elamaran, Vinay Gupta, Sandeep Arya, Sonali Verma, Soumitra Satapathi, Yasuhiro hayawaka, Xinghui Liu
Publikováno v:
Journal of Alloys and Compounds. 918:165653
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::495c908c7aa949cdaece753e8955f9bf
https://doi.org/10.1016/j.jallcom.2022.165653
https://doi.org/10.1016/j.jallcom.2022.165653
Autor:
Hiroshi Inokawa, Amit Banerjee, Norihisa Hiromoto, Yuya Suzuki, Hiroaki Satoh, Durgadevi Elamaran
Publikováno v:
Micromachines, Vol 11, Iss 718, p 718 (2020)
Micromachines
Volume 11
Issue 8
Micromachines
Volume 11
Issue 8
Assuming that the 0.6-&mu
m silicon-on-insulator (SOI) complementary metal&ndash
oxide&ndash
semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-
m silicon-on-insulator (SOI) complementary metal&ndash
oxide&ndash
semiconductor (CMOS) technology, different Si-based temperature sensors such as metal-oxide-semiconductor field-effect transistor (MOSFET) (n-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bdd052c864f6d72ad0b4a6c44a3ad43
https://www.mdpi.com/2072-666X/11/8/718
https://www.mdpi.com/2072-666X/11/8/718
Publikováno v:
2019 16th International Conference on Quality in Research (QIR): International Symposium on Electrical and Computer Engineering.
Scaling trend in the integrated heater and thermistor for terahertz antenna-couple bolometers is analyzed in terms of responsivity and thermal response speed, i.e. cutoff frequency. Two cases where dimensions of the heater and thermistor are changed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::066da6086137499e56ea115521638585
https://doi.org/10.1109/qir.2019.8898297
https://doi.org/10.1109/qir.2019.8898297
Autor:
Makoto Aoki, Amit Banerjee, Hiroshi Inokawa, Catur Apriono, Eko Tjipto Rahardjo, Norihisa Hiromoto, Durgadevi Elamaran, Erik Bruendermann, Hiroaki Satoh
Publikováno v:
2019 16th International Conference on Quality in Research (QIR): International Symposium on Electrical and Computer Engineering.
High-detectivity room-temperature terahertz (THz) detectors are expected to be utilized in spectroscopy and imaging for such applications as inspection for safety, nondestructive sensing in industry and construction, noninvasive examination for medic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c4f2e43cce3bae129cc562fe2e9a4d3
https://doi.org/10.1109/qir.2019.8898200
https://doi.org/10.1109/qir.2019.8898200
Publikováno v:
2019 Silicon Nanoelectronics Workshop (SNW).
Room temperature terahertz bolometers were characterized with various silicon-on-insulator (SOI) CMOS temperature sensors (MOSFET, pn junction diode, resistor and thermocouple) by adopting the 1-THz antenna-coupled structure and assuming 0.6 μm SOI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75d8351cf94c2dbfd8985944025b3c4c
https://doi.org/10.23919/snw.2019.8782928
https://doi.org/10.23919/snw.2019.8782928
Autor:
Hiroshi Inokawa, Hiroaki Satoh, Norihisa Hiromoto, Amit Banerjee, Durgadevi Elamaran, Yash Sharma
Publikováno v:
Journal of Applied Physics. 125:214502
In this study, uncooled antenna-coupled microbolometer arrays were fabricated to detect terahertz waves by using nanoscale meander-shaped Ti thermistors with design widths of DW = 0.1 and 0.2 μm, respectively, on SiO2 and SiNx substrates. Each unit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87f46ccdb9bc417dc3c81a7bb7732779
https://doi.org/10.1063/1.5083643
https://doi.org/10.1063/1.5083643
Publikováno v:
Japanese Journal of Applied Physics. 58:SDDE08
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f16b32e206bfdd20f2bf710667101dc
http://hdl.handle.net/10297/00026717
http://hdl.handle.net/10297/00026717