Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Dunyuan Liao"'
Autor:
Huading Song, Zitong Zhang, Dong Pan, Donghao Liu, Zhaoyu Wang, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Dong E. Liu, Runan Shang, Jianhua Zhao, Hao Zhang
Publikováno v:
Physical Review Research, Vol 4, Iss 3, p 033235 (2022)
We report electron transport studies of a thin InAs-Al hybrid semiconductor-superconductor nanowire device using a four-terminal design. Compared to previous studies, thinner InAs nanowire (diameter less than 40 nm) is expected to reach fewer subband
Externí odkaz:
https://doaj.org/article/7573eb406908457c81d41b7a052ede0b
Autor:
Zhichuan Wang, Shan Zhang, Dong Pan, Gu Zhang, Zezhou Xia, Zonglin Li, Donghao Liu, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Yongqing Li, Dong E. Liu, Runan Shang, Jianhua Zhao, Hao Zhang
We study Andreev bound states in hybrid InAs-Al nanowire devices. The energy of these states can be tuned to zero by gate voltage or magnetic field, revealing large zero bias peaks (ZBPs) near 2e^2/h in tunneling conductance. Probing these large ZBPs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::238bb471027443ea70753a004b50cc6f
Autor:
Shan Zhang, Zhichuan Wang, Dong Pan, Hangzhe Li, Shuai Lu, Zonglin Li, Gu Zhang, Donghao Liu, Zhan Cao, Lei Liu, Lianjun Wen, Dunyuan Liao, Ran Zhuo, Runan Shang, Dong E. Liu, Jianhua Zhao, Hao Zhang
Publikováno v:
Physical review letters. 128(7)
Hybrid semiconductor-superconductor nanowires are predicted to host Majorana zero modes, manifested as zero-bias peaks (ZBPs) in tunneling conductance. ZBPs alone, however, are not sufficient evidence due to the ubiquitous presence of Andreev bound s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f629d9858c99eca9e710f22a53e1803
https://pubmed.ncbi.nlm.nih.gov/35244449
https://pubmed.ncbi.nlm.nih.gov/35244449
Publikováno v:
Nanotechnology. 31(46)
InAs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c85462db86f57f172bc383a705c32ee2
https://pubmed.ncbi.nlm.nih.gov/32750681
https://pubmed.ncbi.nlm.nih.gov/32750681
Publikováno v:
Nanotechnology. 31:465602
InAs1-x Sb x nanowires show promise for use in nanoelectronics, infrared optoelectronics and topological quantum computation. Such applications require a high degree of growth control over the growth direction, crystal quality and morphology of the n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3278ed2fa5f0438db4b8cccb1a1905ae
https://doi.org/10.1088/1361-6528/abac32
https://doi.org/10.1088/1361-6528/abac32
Publikováno v:
Nanotechnology. 31:155601
We have successfully fabricated foreign-catalyst-free GaSb nanowires directly on cleaved Si (111) substrates by molecular-beam epitaxy. We find that GaSb nanowires with the absence and presence of Ga droplets at the tip can be simultaneously obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::91ff45b4c996e1d3946bfbb97e442699
https://doi.org/10.1088/1361-6528/ab5d78
https://doi.org/10.1088/1361-6528/ab5d78
Publikováno v:
Nanotechnology; 4/10/2020, Vol. 31 Issue 15, p1-1, 1p
Autor:
Shan Zhang1, Zhichuan Wang2, Dong Pan3, Hangzhe Li1, Shuai Lu1, Zonglin Li1, Gu Zhang4, Donghao Liu1, Zhan Cao4, Lei Liu3, Lianjun Wen3, Dunyuan Liao3, Ran Zhuo3, Runan Shang4, Liu, Dong E.1,4,5 dongeliu@mail.tsinghua.edu.cn, Jianhua Zhao3 jhzhao@semi.ac.cn, Hao Zhang1,4,5 hzquantum@mail.tsinghua.edu.cn
Publikováno v:
Physical Review Letters. 2/18/2022, Vol. 128 Issue 7, p1-1. 1p.