Zobrazeno 1 - 10
of 96
pro vyhledávání: '"Duncan W. E. Allsopp"'
Autor:
Javier Marugán, Duncan W. E. Allsopp, Christopher R. Bowen, Cintia Casado, Ruud Timmers, Christopher Clarke, A. Sergejevs, R. van Grieken
Publikováno v:
Chemical Engineering Journal. 327:1043-1055
Ultraviolet light emitting diodes (UV-LEDs) are attracting the interest of researchers for the design of compact photoreactors due to their energy efficiency, life expectancy, design flexibility, and easily tuned intensity and emission wavelength. Ho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5bd6a852d0d7ddd837962612cbbc493
https://doi.org/10.1016/j.cej.2017.06.167
https://doi.org/10.1016/j.cej.2017.06.167
A calibrated UV-LED based light source for water purification and characterisation of photocatalysis
Autor:
Javier Marugán, Christopher Clarke, P. Manpetch, Duncan W. E. Allsopp, Cintia Casado, W. Singhapong, Ruud Timmers, Christopher R. Bowen, A Jaroenworaluck, A. Sergejevs
Publikováno v:
Sergejevs, A, Clarke, C T, Allsopp, D W E, Marugan, J, Jaroenworaluck, A, Singhapong, W, Manpetch, P, Timmers, R, Casado, C & Bowen, C R 2017, ' A calibrated UV-LED based light source for water purification and characterisation of photocatalysis ', Photochemical & Photobiological Sciences, vol. 16, no. 11, pp. 1690-1699 . https://doi.org/10.1039/c7pp00269f
Photocatalysis has a potential to become a cost effective industrial process for water cleaning. One of the most studied photocatalysts is titanium dioxide which, as a wide band gap semiconductor, requires ultraviolet (UV) light for its photoactivati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dcc668fe482760cfbc1fb3346a8987dd
https://doi.org/10.1039/c7pp00269f
https://doi.org/10.1039/c7pp00269f
Autor:
Michelle A. Moram, Andrei P. Mihai, Hei-Chit L. Tsui, Chen-Sheng Lin, Bin Zou, Duncan W. E. Allsopp, Kate Cavanagh
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 4, Pp 1-8 (2017)
Lin, C-S, Cavanagh, K, Tsui, H-C L, Mihai, A, Zou, B, Allsopp, D W E & Moram, M A 2017, ' Ultraviolet Emission From Resonant Tunnelling Metal-Insulator-Semiconductor Light Emitting Tunnel Diodes ', IEEE Photonics Journal, vol. 9, no. 4, pp. 1-8 . https://doi.org/10.1109/JPHOT.2017.2714341
Lin, C-S, Cavanagh, K, Tsui, H-C L, Mihai, A, Zou, B, Allsopp, D W E & Moram, M A 2017, ' Ultraviolet Emission From Resonant Tunnelling Metal-Insulator-Semiconductor Light Emitting Tunnel Diodes ', IEEE Photonics Journal, vol. 9, no. 4, pp. 1-8 . https://doi.org/10.1109/JPHOT.2017.2714341
Strong room-temperature electroluminescence at 365 nm has been demonstrated from simple Au/AlN/ n -GaN metal–insulator–semiconductor (MIS) light emitting diodes, which do not contain p -doped material. Current-voltage and electroluminescence data
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5453e779e76a88ae555fa9296a3d3ab
https://doi.org/10.1109/jphot.2017.2714341
https://doi.org/10.1109/jphot.2017.2714341
Autor:
Martin J Cryan, Jon R Pugh, Tao Wang, Krishna C. Balram, Duncan W. E. Allsopp, Philip A. Shields, Emmanuel Le Boulbar, Simeng Jia
Publikováno v:
Jia, S, Le Boulbar, E D, Balram, K C, Pugh, J R, Wang, T, Allsopp, D W E, Shields, P A & Cryan, M J 2019, ' Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography ', Micro and Nano Letters, vol. 14, no. 13, pp. 1322-1327 . https://doi.org/10.1049/mnl.2019.0366
Jia, S, Le Boulbar, E D, Coimbatore Balram, K, Pugh, J R, Wang, T, Allsopp, D W E, Shields, P A & Cryan, M J 2019, ' A Waveguide Integrated GaN Distributed Bragg Reflector Cavity Using Low Cost Nanolithography ', Nano-Micro Letters, vol. 14, no. 13 . https://doi.org/10.1049/mnl.2019.0366
Jia, S, Le Boulbar, E D, Coimbatore Balram, K, Pugh, J R, Wang, T, Allsopp, D W E, Shields, P A & Cryan, M J 2019, ' A Waveguide Integrated GaN Distributed Bragg Reflector Cavity Using Low Cost Nanolithography ', Nano-Micro Letters, vol. 14, no. 13 . https://doi.org/10.1049/mnl.2019.0366
In this paper, we present the design, fabrication and measurement of gallium nitride (GaN) Distributed Bragg Reflector (DBR) cavities integrated with input and output grating couplers. The devices are fabricated using a new, low cost nanolithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d43eb12e8291c94afcee4e747f000373
https://purehost.bath.ac.uk/ws/files/202036731/A_Waveguide_Integrated_GaN_Distributed_Bragg_Reflector_Cavity_Using_Low_Cost_Nanolithography_Simeng_Jia.pdf
https://purehost.bath.ac.uk/ws/files/202036731/A_Waveguide_Integrated_GaN_Distributed_Bragg_Reflector_Cavity_Using_Low_Cost_Nanolithography_Simeng_Jia.pdf
Publikováno v:
IEEE Transactions on Electron Devices. 63:4796-4801
The scope for reengineering the stress in vertical light-emitting diodes (VLEDs) grown Si(111) substrates during the substrate removal and wafer bonding steps in fabrication processing to improve internal quantum efficiency (IQE) is demonstrated. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::822fae3f956c540af2dbacc443e4f236
https://doi.org/10.1109/ted.2016.2614435
https://doi.org/10.1109/ted.2016.2614435
Autor:
Wang-Nan Wang, Kate Cavanagh, Chen-Sheng Lin, Andrei P. Mihai, Hei Chit Leo Tsui, Duncan W. E. Allsopp, Bin Zou, Michelle A. Moram, Ling-Shan Yu
Publikováno v:
physica status solidi (a). 218:2000524
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42fbb01d08f93766eca2d1c14ac92bf1
https://doi.org/10.1002/pssa.202000524
https://doi.org/10.1002/pssa.202000524
Autor:
Duncan W. E. Allsopp, Tao Wang, Martin J Cryan, Jonathan R. Pugh, Philip A. Shields, S. Jia, Krishna C. Balram, E. D. Le Boulbar
Publikováno v:
Frontiers in Optics / Laser Science.
GaN grating couplers and a distributed Bragg reflector cavity are fabricated using displacement Talbot lithography on GaN-on-sapphire. Cavity resonances are simulated and measured for two devices with Q factors of ~200.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd5cc835bda79cfb4044f85df606dc25
https://doi.org/10.1364/fio.2018.jtu3a.86
https://doi.org/10.1364/fio.2018.jtu3a.86
Autor:
Jon R Pugh, M. Athanasiou, Duncan W. E. Allsopp, E. D. Le Boulbar, Martin J Cryan, Gunnar Kusch, Robert W. Martin, Tao Wang, R. M. Smith, Andrei Sarua, Philip A. Shields, Pierre-Marie Coulon
Publikováno v:
Optics Express
Coulon, P M, Pugh, J R, Athanasiou, M, Kusch, G, Le Boulbar, E D, Sarua, A, Smith, R, Martin, R W, Wang, T, Cryan, M, Allsopp, D W E & Shields, P A 2017, ' Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities ', Optics Express, vol. 25, no. 23, pp. 28246-28257 . https://doi.org/10.1364/OE.25.028246
Coulon, P M, Pugh, J R, Athanasiou, M, Kusch, G, Le Boulbar, E D, Sarua, A, Smith, R, Martin, R W, Wang, T, Cryan, M, Allsopp, D W E & Shields, P A 2017, ' Optical properties and resonant cavity modes in axial InGaN/GaN nanotube microcavities ', Optics Express, vol. 25, no. 23, pp. 28246-28257 . https://doi.org/10.1364/OE.25.028246
Microcavities based on group-III nitride material offer a notable platform for the investigation of light-matter interactions as well as the development of devices such as high efficiency light emitting diodes (LEDs) and low-threshold nanolasers. Dis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::abc7c437c9a539d9daef520323355282
https://eprints.whiterose.ac.uk/123860/1/Optics-express-1.pdf
https://eprints.whiterose.ac.uk/123860/1/Optics-express-1.pdf
Publikováno v:
IEEE Journal of Quantum Electronics. 50:1-8
A mathematical model, based on cylindrical modes, capable of predicting the far-field angular emission pattern resulting from emission within cylindrical nanostructures is demonstrated and shown to yield self-consistent detailed numerical results. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::074486b0a52fcac5c547993b9c7b104a
https://doi.org/10.1109/jqe.2014.2345024
https://doi.org/10.1109/jqe.2014.2345024
Publikováno v:
Philosophical Magazine. 93:3154-3166
The planar defect structure of coalesced GaN layers fabricated on ordered arrays of nanorods and grown by metal–organic vapour phase epitaxy has been studied using conventional and high-resolution transmission electron microscopy. During the proces
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57c6e2dfa5e64287239f649417e0f01e
https://doi.org/10.1080/14786435.2013.805272
https://doi.org/10.1080/14786435.2013.805272