Zobrazeno 1 - 10
of 28 323
pro vyhledávání: '"Dunand A"'
Autor:
Pintus, Valentina1 v.pintus@akbild.ac.at, Baragona, Anthony J.2, Wieland, Karin3, Schilling, Michael4, Miklin-Kniefacz, Silvia5, Haisch, Christoph3, Schreiner, Manfred1
Publikováno v:
Scientific Reports. 12/11/2019, Vol. 9 Issue 1, p1-12. 12p.
Autor:
Cruz-Uribe, Eugene
Publikováno v:
Journal of Near Eastern Studies, 2010 Oct . 69(2), 231-232.
Externí odkaz:
https://www.jstor.org/stable/10.1086/658947
Akademický článek
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This study investigates the substitution of cerium (Ce) with mischmetal (MM) in cast Al-MM alloys, focusing on microstructure, hardness, tensile and compression properties, creep resistance, and coarsening resistance. Al-MM alloys with various MM com
Externí odkaz:
http://arxiv.org/abs/2408.14489
Autor:
Michel, Patrick, Bonnet, Corinne
Publikováno v:
Anabases, 2008 Jan 01(8), 243-253.
Externí odkaz:
https://www.jstor.org/stable/43595843
Autor:
Wyrsch, Nicolas, Antognini, Luca, Ballif, Christophe, Braccini, Saverio, Casolaro, Pierluigi, Dunand, Sylvain, Gottstein, Alexander, Large, Matt, Mateu, Isidre, Thomet, Jonathan
Ultra-high dose rate radiation therapy (FLASH) based on proton irradiation is of major interest for cancer treatments but creates new challenges for dose monitoring. Amorphous hydrogenated silicon is known to be one of the most radiation-hard semicon
Externí odkaz:
http://arxiv.org/abs/2401.14300
Autor:
Gaulmier, Jean, de Contenson, H.
Publikováno v:
Syria, 1987 Jan 01. 64(3/4), 337-340.
Externí odkaz:
https://www.jstor.org/stable/4198651
Autor:
Dussaud, René
Publikováno v:
Syria, 1927 Jan 01. 8(2), 113-125.
Externí odkaz:
https://www.jstor.org/stable/4195346
Autor:
Menichelli, M., Antognini, L., Aziz, S., Bashiri, A., Bizzarri, M., Calcagnile, L., Caprai, M., Caputo, D., Caricato, A. P., Catalano, R., Chilà, D., Cirrone, G. A. P., Croci, T., Cuttone, G., De Cesare, G., Dunand, S., Fabi, M., Frontini, L., Grimani, C., Ionica, M., Kanxheri, K., Large, M., Liberali, V., Lovecchio, N., Martino, M., Maruccio, G., Mazza, G., Monteduro, A. G., Morozzi, A., Moscatelli, F., Nascetti, A., Pallotta, S., Papi, A., Passeri, D., Pedio, M., Petasecca, M., Petringa, G., Peverini, F., Piccolo, L., Placidi, P., Quarta, G., Rizzato, S., Rossi, G., Sabbatini, F., Servoli, L., Stabile, A., Talamonti, C., Thomet, J. E., Tosti, L., Villani, M., Wheadon, R. J., Wyrsch, N., Zema, N.
Hydrogenated amorphous silicon (a-Si:H) is a material having an intrinsically high radiation hardness that can be deposited on flexible substrates like Polyimide. For these properties a-Si:H can be used for the production of flexible sensors. a-Si:H
Externí odkaz:
http://arxiv.org/abs/2310.00495