Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Dun-Nian Yaung"'
Autor:
Dun-Nian Yaung, 楊敦年
89
The characteristics of submicron polysilicon thin film transistors (TFTs) with/without some improving technologies have been investigated. It was found that narrow width effects of unhydrogenated and hydrogenated are dominated by the traps of
The characteristics of submicron polysilicon thin film transistors (TFTs) with/without some improving technologies have been investigated. It was found that narrow width effects of unhydrogenated and hydrogenated are dominated by the traps of
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/67237225466761807310
Autor:
Dun-Nian Yaung, 楊敦年
82
Because SiC material possesses wide energy gap,large saturated drift velocity,large breakdown field,better physical and chemical stability.Thus,the application of SiC material is used widely in high temperature,high power devices.This thesis
Because SiC material possesses wide energy gap,large saturated drift velocity,large breakdown field,better physical and chemical stability.Thus,the application of SiC material is used widely in high temperature,high power devices.This thesis
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/19538351706172083295
Autor:
Augusto Ronchini Ximenes, Edoardo Charbon, Myung-Jae Lee, Preethi Padmanabhan, Dun-Nian Yaung, Yuichiro Yamashita
Publikováno v:
IEEE Journal of Solid-State Circuits. 54:3203-3214
This article introduces a modular, direct time-of-flight (TOF) depth sensor. Each module is digitally synthesized and features a 2 $\times $ (8 $\times $ 8) single-photon avalanche diode (SPAD) pixel array, an edge-sensitive decision tree, a shared t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9315e6b292f5dac65aa7d22665e5be1
https://doi.org/10.1109/jssc.2019.2938412
https://doi.org/10.1109/jssc.2019.2938412
Publikováno v:
ITE Transactions on Media Technology and Applications. 6:180-186
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e64ffaa5ec00f5f8dab3a892a5371fbd
https://doi.org/10.3169/mta.6.180
https://doi.org/10.3169/mta.6.180
Autor:
Edoardo Charbon, Preethi Padmanabhan, Augusto Ronchini Ximenes, Dun-Nian Yaung, Myung-Jae Lee, Yuichiro Yamashita
Publikováno v:
ISSCC
Light detection and ranging (LiDAR) systems based on direct time-of-flight (DTOF) are used in spacecraft navigation, assembly-line robotics, augmented and virtual reality (AR/VR), (drone-based) surveillance, advanced driver assistance systems (ADAS),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c232b01e32d53a7ffe92b466bb45f90
https://doi.org/10.1109/isscc.2018.8310201
https://doi.org/10.1109/isscc.2018.8310201
Autor:
Kuo-Chin Huang, Tzu-Jui Wang, Edoardo Charbon, Preethi Padmanabhan, Augusto Ronchini Ximenes, Myung-Jae Lee, Dun-Nian Yaung, Yuichiro Yamashita
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We report on the world's first back-illuminated 3D-stacked single-photon avalanche diode (SPAD) in 45nm CMOS technology. This SPAD achieves a dark count rate of 55.4cps/μm2, a maximum photon detection probability of 31.8% at 600nm, over 5% in the 42
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05be80a954f68036aea4281404622f33
https://doi.org/10.1109/iedm.2017.8268405
https://doi.org/10.1109/iedm.2017.8268405
Autor:
Ivan Wu, Dun-Nian Yaung, Alex Kalnitsky, George Liu, Emerson Cheng, B. J. Woo, Huang Shih-Fen
Publikováno v:
2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS).
"Smart" cars, houses, offices, cities, etc. require increasingly large variety of sensors and associated electronics. This paper describes T SMC's activities in motion, pressure, optical and bio sensors that we hope will help transform "smart everyth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0d83baf4294f3c3ce1c84400cddd3d3
https://doi.org/10.1109/transducers.2017.7993973
https://doi.org/10.1109/transducers.2017.7993973
Autor:
Chung S. Wang, Shyh-Fann Ting, Kuo-Ching Huang, Y. P. Hsu, Chung-Hui Chen, Mong-Song Liang, Yean-Kuen Fang, Yvonne Lin, Di-Son Kuo, Dun-Nian Yaung
Publikováno v:
Solid-State Electronics. 45:297-301
The program speed of a selected cell and the program disturbance of unselected cells sharing the common program-line in split-gate source-side injected flash memory has been investigated. It is found that the program disturbance becomes severe as the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98128fb0fcf361b3ac62e493fae7d1fc
https://doi.org/10.1016/s0038-1101(01)00009-0
https://doi.org/10.1016/s0038-1101(01)00009-0
Autor:
Kuo-Ching Huang, Shou-Gwo Wuu, C. C. Hung, Y. J. Wang, Mong-Song Liang, Dun-Nian Yaung, Yean-Kuen Fang
Publikováno v:
Thin Solid Films. 382:271-274
The subthreshold characteristics of both hydrogenated and unhydrogenated sub-micrometer polysilicon thin-film transistors have been investigated in detail. The subthreshold slope of unhydrogenated TFTs becomes steeper at higher drain voltage. This is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7abc04c96f0721ed85c85ffb2752debc
https://doi.org/10.1016/s0040-6090(00)01766-1
https://doi.org/10.1016/s0040-6090(00)01766-1
Autor:
Shou-Gwo Wuu, Dun-Nian Yaung, Chin-Ying Chen, Yen-Ping Wang, Kuo-Ching Huang, Yean-Kuen Fang, Mong-Song Liang, Chia-Che Hung
Publikováno v:
Solid-State Electronics. 44:1997-2000
A self-aligned Ti-silicide interpoly contact for submicron bottom-gate TFT-SRAM with poly-channel oxidation is presented. In this new scheme, oxidation of poly-channel improves subthreshold swing and leakage current of TFTs, but degrades cell stabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ccd1c519e0f2b185921cb5687cfbe82
https://doi.org/10.1016/s0038-1101(00)00168-4
https://doi.org/10.1016/s0038-1101(00)00168-4