Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Dun-Bao Ruan"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1033-1037 (2019)
In this study, ferroelectric Fin field effect transistors (Fe-FinFET) with 5-nm-thick Hf0.5Zr0.5O2 (HZO) layers on silicon-on-insulator substrates were experimentally demonstrated. These devices had completed dimensions of single channel widths (WCh)
Externí odkaz:
https://doaj.org/article/d1e0bc20caa44c6f9d618454f20485eb
Publikováno v:
Nanomaterials, Vol 11, Iss 9, p 2204 (2021)
In this study, the influence of oxygen concentration in InWZnO (IWZO), which was used as the switching layer of conductive bridge random access memory, (CBRAM) is investigated. With different oxygen flow during the sputtering process, the IWZO film c
Externí odkaz:
https://doaj.org/article/3894d4afe23b4690a96c6edfd5ae056d
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 4, Iss 5, Pp 246-252 (2016)
The gate-recessed GaN MOSFET on a Si substrate is demonstrated to achieve a record highest normalized transistor current (μCox) of 335 μA/V2 (410 mA/mm at LG = 5 μm and only VG = 4 V), ION/IOFF of 9 orders of magnitude, small 79 mV/dec sub-thresho
Externí odkaz:
https://doaj.org/article/0e750a819ba24929aca301d2d20c97a4
Autor:
Dun-Bao Ruan, Kuei-Shu Chang-Liao, Chih-Wei Liu, Yao-Jen Lee, Yu-Hsuan Chien, Bo-Lien Kuo, Yu-Chuan Chiu, Kai-Jhih Gan, Chih-Chieh Hsu, Po-Tsun Liu
Publikováno v:
IEEE Electron Device Letters. 43:838-841
Publikováno v:
IEEE Electron Device Letters. 42:645-648
Significant improvements on Ge nMOSFET can be achieved by a novel low temperature supercritical phase fluid treatment with H2O2 cosolvent. Thanks to the reduction of oxygen vacancy and unstable oxidation states, devices with the proposed treatment ex
Publikováno v:
Journal of Electronic Materials. 49:6817-6822
The effect of annealing on the performance of conductive-bridging random-access memory (CBRAM) with an amorphous gallium oxide (a-Ga2O3) switching layer has been studied. After annealing at 200°C in N2, a significant improvement of the bipolar resis
Publikováno v:
IEEE Electron Device Letters. 41:529-532
A low equivalent-oxide-thickness of 0.58 nm and a low gate leakage current density of $\sim 2\times 10^{-{5}}$ A/cm2 at VG = VFB – 1 V in p-substrate Ge (pGe) MOS device can be simultaneously achieved by a hydrogen plasma (H*) treatment on GeO2 int
Autor:
Po-Tsun Liu, Dun-Bao Ruan, Ta-Chun Chien, Yu-Chuan Chiu, Simon M. Sze, Min-Chin Yu, Kai-Jhih Gan
Publikováno v:
IEEE Transactions on Nanotechnology. 19:481-485
High performance and transparent amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFT) have been successfully fabricated on the colorless polyimide plastic substrate using a high quality HfO2 dielectric film formed by the low tempera
Autor:
Yu-Chuan Chiu, Jia-Lin Huang, Yu-Han Chen, Kai-Jhih Gan, Dun-Bao Ruan, Chih-Chieh Hsu, Po-Tsun Liu
Publikováno v:
Conference on Lasers and Electro-Optics.
Amorphous InZnO material is chosen for a phototransistor sensing layer, respectively, with a completely compatible process integrated into in-cell embedded photo sensor architecture. The photo sensor exhibits a high optical responsivity (1720 A/W) an