Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Dumitru Untila"'
Autor:
Veaceslav Sprincean, Liviu Leontie, Iuliana Caraman, Dumitru Untila, Mihaela Girtan, Silviu Gurlui, Petru Lisnic, Corneliu Doroftei, Aurelian Carlescu, Felicia Iacomi, Mihail Caraman
Publikováno v:
Materials; Volume 15; Issue 9; Pages: 3140
In this work, optical, including photoluminescence and photosensitivity, characteristics of micrometer-sized flexible n (p)–InSe/In2O3 heterojunctions, obtained by heat treatment of single-crystalline InSe plates doped with (0.5 at.%) Cd (Sn), in a
Autor:
Veaceslav Sprincean, Ala Cojocaru, Ion Tiginyanu, Dumitru Untila, Iuliana Caraman, Leonid Palachi, Mihail Caraman, Rainer Adeling, Anna Gapeeva, Vasile Postica, Oleg Lupan
Publikováno v:
Materials Science in Semiconductor Processing
In this work, the β-Ga2O3 nanostructures were obtained by thermal annealing in air of β-Ga2S3 single crystals at relatively high temperatures of 970 K, 1070 K and 1170 K for 6 h. The structural, morphological, chemical and optical properties of β-
Autor:
Universitatea de Stat din Moldova, Chișinău, R. Moldova, Nicolae Gurău, Dumitru Untila, Centrul Naţional de Expertize Judiciare, Chişinău, R. Moldova, Mihail Caraman, Olga Cataraga, Silvia Evtodiev
Publikováno v:
Studia Universitatis Babeş-Bolyai Iurisprudentia. 62:121-128
Autor:
Dumitru Untila, Elmira Vatavu, Mihail Caraman, Liliana Dmitroglo, Veaceslav Sprincean, Iuliana Caraman
Publikováno v:
IFMBE Proceedings ISBN: 9783030318659
The chemical composition and structure of Ga2O3 obtained by thermal treatment (TT) in air of β-Ga2Se3 crystals were studied using the X-ray diffraction (XRD) method, Raman spectroscopy, EDX, and SEM. The surface of the Ga2Se3 crystal air annealed at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32cd81ffe423def9ba8f9c104f3f49f0
https://doi.org/10.1007/978-3-030-31866-6_42
https://doi.org/10.1007/978-3-030-31866-6_42
Publikováno v:
IFMBE Proceedings ISBN: 9783030318659
The GaSe single crystals were doped with Eu in the process of their synthesis and growth. The oxide of β-Ga2O3 doped with Eu in the form of massive nanowires was obtained by thermal treatment (TT) in the atmosphere of GaSe single crystals doped with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::240722fd046a235b8ce23da323cbf729
https://doi.org/10.1007/978-3-030-31866-6_49
https://doi.org/10.1007/978-3-030-31866-6_49
Autor:
Igor Evtodiev, Nicolae Spalatu, Iuliana Caraman, Liviu Leontie, Dumitru Untila, Mihail Caraman
Publikováno v:
physica status solidi (b). 253:2515-2522
Autor:
S. Hamzaoui, Igor Evtodiev, Liviu Leontie, Liliana Dmitroglo, Silviu Gurlui, Oana Susu, Iuliana Caraman, Georgiana Bulai, Dumitru Untila, Mokhtar Zerdali
Publikováno v:
Thin Solid Films. 617:103-107
Optical absorption and photoluminescence of polycrystalline ZnO films obtained by thermal oxidation of Zn thin films deposited on amorphous SiO 2 (quartz) and (0001) surface of single crystalline GaSe lamellas have been investigated. The absorption e
Autor:
Corneliu Doroftei, Dumitru Untila, Elmira Vatavu, Mihail Caraman, Liviu Leontie, Iuliana Caraman, Veaceslav Sprincean
Publikováno v:
Journal of Luminescence. 227:117550
In this work crystal structure and surface morphology, photoluminescence and fundamental optical absorption of n− InSe and p−InSe:Cd (0.05 at. %) single crystals and related heterojunctions with native oxide (In2O3) formed by surface oxidation ar
Autor:
Iuliana Caraman, Silvia Evtodiev, Dumitru Untila, Irina Rotaru, Igor Evtodiev, Nicolae Spalatu, Mihail Caraman
Publikováno v:
Energy Procedia. 84:176-182
A material composed of GaTe and ZnTe crystallites with average diameter of ∼ 37 nm and 68 nm respectively was obtained by heat treatment at the temperature of 1000K and 1073K of GaTe plates in Zn vapour for 24 hours. The absorbance spectra of compo
Autor:
Dumitru UNTILA, Igor EVTODIEV, Iuliana CARAMAN, Valeriu KANTSER, Nicolae SPALATU, Liliana DMITROGLO, Silvia EVTODIEV, Dorin SPOIALĂ, Irina ROTARU, Petru GAŞIN
Publikováno v:
Studia Universitatis Moldaviae: Stiinte Exacte si Economice, Vol 0, Iss 2 (102) (2017)
GaSe single crystals doped with Eu (0.025, 0.05, 0.5, 1.0 and 3.0 at%) were grown by Bridgman method using Ga, Se and Eu elementary components. The crystalline structure and vibration modes of the GaSe: Eu crystals lattice were studied by X-ray diffr