Zobrazeno 1 - 10
of 39
pro vyhledávání: '"Duk-Hyun Choe"'
Autor:
Atif Jan, Stephanie A. Fraser, Taehwan Moon, Yun Seong Lee, Hagyoul Bae, Hyun Jae Lee, Duk‐Hyun Choe, Maximilian T. Becker, Judith L. MacManus‐Driscoll, Jinseong Heo, Giuliana Di Martino
Publikováno v:
Small Science, Vol 4, Iss 11, Pp n/a-n/a (2024)
Ferroelectric HfO2‐based films incorporated in nonvolatile memory devices offer a low‐energy, high‐speed alternative to conventional memory systems. Oxygen vacancies have been rigorously cited in literature to be pivotal in stabilizing the pola
Externí odkaz:
https://doaj.org/article/37d2306da33842e6a1d3cadab241fffe
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
Taehwan Moon, Hyun Jae Lee, Seunggeol Nam, Hagyoul Bae, Duk-Hyun Choe, Sanghyun Jo, Yun Seong Lee, Yoonsang Park, J Joshua Yang, Jinseong Heo
Publikováno v:
Neuromorphic Computing and Engineering, Vol 3, Iss 2, p 024001 (2023)
We propose a novel synaptic design of more efficient neuromorphic edge-computing with substantially improved linearity and extremely low variability. Specifically, a parallel arrangement of ferroelectric tunnel junctions (FTJ) with an incremental pul
Externí odkaz:
https://doaj.org/article/db5675976ec94bde8fc43525d5ede6de
Autor:
Ji-Hee Kim, Matthew R. Bergren, Jin Cheol Park, Subash Adhikari, Michael Lorke, Thomas Frauenheim, Duk-Hyun Choe, Beom Kim, Hyunyong Choi, Tom Gregorkiewicz, Young Hee Lee
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-9 (2019)
During carrier multiplication, high-energy free carriers in a given material relax by generation of additional electron-hole pairs. Here, the authors report evidence of carrier multiplication in multilayer MoTe2 and WSe2 films with up to 99% conversa
Externí odkaz:
https://doaj.org/article/0aa0200a81034578b05965a772f1e877
Publikováno v:
New Journal of Physics, Vol 16, Iss 11, p 113055 (2014)
We investigate the electronic properties of monolayer and bilayer MoS _2 on α -quartz substrate through first-principles density functional calculations. Due to the coupling of the MoS _2 with the substrate, the valence band edge state at the Brillo
Externí odkaz:
https://doaj.org/article/716eae9be24646c7aadd6187cdc3e605
Autor:
Sanghyun Jo, Hyangsook Lee, Duk-Hyun Choe, Jung-Hwa Kim, Yun Seong Lee, Owoong Kwon, Seunggeol Nam, Yoonsang Park, Kihong Kim, Byeong Gyu Chae, Sangwook Kim, Seunghun Kang, Taehwan Moon, Hagyoul Bae, Jung Yeon Won, Dong-Jin Yun, Myoungho Jeong, Hyun Hwi Lee, Yeonchoo Cho, Kwang-Hee Lee, Hyun Jae Lee, Sangjun Lee, Kab-Jin Nam, Dongjin Jung, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Seongjun Park, Yunseok Kim, Eunha Lee, Jinseong Heo
Publikováno v:
Nature Electronics. 6:390-397
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed2020f727400684591583b0819f6125
https://doi.org/10.1038/s41928-023-00959-3
https://doi.org/10.1038/s41928-023-00959-3
Autor:
Hagyoul Bae, Jinseong Heo, Sung-Hyun Kim, Sanghyun Jo, Yunseong Lee, Duk-Hyun Choe, Taehwan Moon, Seung-Geol Nam
Publikováno v:
Materials Today. 50:8-15
Fluorite-structure ferroelectrics — in particular the orthorhombic phase of HfO2 — are of paramount interest to academia and industry because they show unprecedented scalability down to 1-nm-thick size and are compatible with Si electronics. Howe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c71a861f2dde17aea470ba97978f234d
https://doi.org/10.1016/j.mattod.2021.07.022
https://doi.org/10.1016/j.mattod.2021.07.022
Autor:
Ju Yong Park, Duk‐Hyun Choe, Dong Hyun Lee, Geun Taek Yu, Kun Yang, Se Hyun Kim, Geun Hyeong Park, Seung‐Geol Nam, Hyun Jae Lee, Sanghyun Jo, Bong Jin Kuh, Daewon Ha, Yongsung Kim, Jinseong Heo, Min Hyuk Park
Publikováno v:
Advanced materials (Deerfield Beach, Fla.).
Over the last few decades, the research on ferroelectric memories has been limited due to their dimensional scalability and incompatibility with complementary metal-oxide-semiconductor (CMOS) technology. The discovery of ferroelectricity in fluorite-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e2e69d6e15b4a9bccf91e8854f42c3ee
https://pubmed.ncbi.nlm.nih.gov/35952355
https://pubmed.ncbi.nlm.nih.gov/35952355
Autor:
Tom Gregorkiewicz, Ji-Hee Kim, Beom Kyung Kim, Jin Cheol Park, Subash Adhikari, Young Hee Lee, Hyunyong Choi, Matthew R. Bergren, Michael Lorke, Thomas Frauenheim, Duk-Hyun Choe
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-9 (2019)
Nature Communications
Nature Communications
Carrier multiplication (CM) is a process in which high-energy free carriers relax by generation of additional electron-hole pairs rather than by heat dissipation. CM is promising disruptive improvements in photovoltaic energy conversion and light det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e1378e7f9a8f259e61d18df16108da8
https://doaj.org/article/0aa0200a81034578b05965a772f1e877
https://doaj.org/article/0aa0200a81034578b05965a772f1e877
Autor:
Jinseong Heo, Hyangsook Lee, Yeehyun Park, Yeonchoo Cho, Duk-Hyun Choe, Hyun Hwi Lee, Hyoungsub Kim, Seunghun Kang, Mirine Leem, Eunha Lee, Taehwan Moon, Jung-Hwa Kim, Sanghyun Jo, Yunseok Kim, Deokjoon Eom, Seontae Park, Hyun-Joon Shin
Publikováno v:
ACS applied materialsinterfaces. 13(30)
HfO2-based ferroelectrics are highly expected to lead the new paradigm of nanoelectronic devices owing to their unexpected ability to enhance ferroelectricity in the ultimate thickness scaling limit (≤2 nm). However, an understanding of its physica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb5c95801315ddde3ef2c626df5fb796
https://pubmed.ncbi.nlm.nih.gov/34310129
https://pubmed.ncbi.nlm.nih.gov/34310129