Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Duk Young Jeong"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:3863-3869
We report a dual gate (DG), low-temperature polysilicon (LTPS) thin-film transistor (TFT) using blue laser annealing (BLA) of amorphous silicon. The DG TFTs with variable bottom gate lengths (LBG) from 2 to 8 $\mu \text {m}$ and a fixed top gate leng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca1b1821fc7e6bbb9094163e1a110275
https://doi.org/10.1109/ted.2021.3091965
https://doi.org/10.1109/ted.2021.3091965
Publikováno v:
Journal of The Korean Society of Physical Medicine. 14:55-62
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79641b7c9293b0d11b920015204a70eb
https://doi.org/10.13066/kspm.2019.14.4.55
https://doi.org/10.13066/kspm.2019.14.4.55
Publikováno v:
IEEE Electron Device Letters. 40:1772-1775
We report the CMOS level shifter (LS) made of p-type low-temperature poly-Si (LTPS) TFT using blue laser annealing (BLA) of amorphous Si (a-Si) and an n-type amorphous indium-gallium-zinc oxide (a-IGZO) TFT. Two cascaded inverters with the bootstrap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62df4a7f22b6a2934bd662d7116111aa
https://doi.org/10.1109/led.2019.2941548
https://doi.org/10.1109/led.2019.2941548
62‐2: Highly Reliable Shift Register with Coplanar a‐IGZO TFTs by Splitting Top Gate into Dual Gates
Publikováno v:
SID Symposium Digest of Technical Papers. 50:878-881
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd3d502784e386d5f625ee4237ddafa1
https://doi.org/10.1002/sdtp.13062
https://doi.org/10.1002/sdtp.13062
Publikováno v:
IEEE Electron Device Letters. 40:411-414
We report a complementary metal oxide semiconductor (CMOS) inverter made of p-type low-temperature poly-Si (LTPS) thin-film transistor (TFT) using blue laser annealing of amorphous Si and an n-type amorphous indium-gallium-zinc oxide (a-IGZO) TFT. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::562d47a8ab0331dc3e91080a10aecf46
https://doi.org/10.1109/led.2019.2893194
https://doi.org/10.1109/led.2019.2893194
Autor:
Jae Gwang Um, Tak Jeong, Jin Jang, Jong Hwa Choi, Hyo-Min Kim, Duk Young Jeong, Younghun Jung, Jeongwook Hur, Sang Hern Lee, Suhui Lee, Jaeyoung Joo, Joon Seop Kwak
Publikováno v:
SID Symposium Digest of Technical Papers. 49:880-883
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddcc300fe7e90d286489d14bbf1f845f
https://doi.org/10.1002/sdtp.12238
https://doi.org/10.1002/sdtp.12238
Autor:
Yuanfeng Chen, Jong Hwa Choi, Jaeyoung Joo, Jeongwook Hut, Geng Di, Tak Jeong, Jin Jang, Hyo-Min Kim, Younghun Jung, Joon Seop Kwak, Suhui Lee, Duk Young Jeong, Sang Hem Lee
Publikováno v:
SID Symposium Digest of Technical Papers. 50:102-104
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa3832537742955efea2a2a1c8033b22
https://doi.org/10.1002/sdtp.12865
https://doi.org/10.1002/sdtp.12865
Publikováno v:
SID Symposium Digest of Technical Papers. 48:1528-1531
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79b40578c8a426a3c35a19773109d307
https://doi.org/10.1002/sdtp.11940
https://doi.org/10.1002/sdtp.11940
Autor:
Hyeokjae Lee, Duk Young Jeong, Sinyoung Cho, Eunsa Hwang, Hyo-Min Kim, Jin Jang, Kyungmok Nam
Publikováno v:
SID Symposium Digest of Technical Papers. 48:157-160
We report in this wok the improvement of current efficiency (CE) roll-off and power efficiency (PE) roll-off of QLED by shell engineering of quantum-dots (QDs). The inverted QLEDs using the green QDs (G-QDs) with optimized shell exhibited the extreme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b90ebd2274b05908c32903c47265bae3
https://doi.org/10.1002/sdtp.11603
https://doi.org/10.1002/sdtp.11603
Publikováno v:
Advanced Engineering Materials. 22:1901430
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::708295b720e526b34504ce6ee7d30b23
https://doi.org/10.1002/adem.201901430
https://doi.org/10.1002/adem.201901430