Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Dujiao Zhang"'
Autor:
Arnab Pal, Kunjesh Agashiwala, Junkai Jiang, Dujiao Zhang, Tanmay Chavan, Ankit Kumar, Chao-Hui Yeh, Wei Cao, Kaustav Banerjee
Publikováno v:
MRS Bulletin. 46:1211-1228
Publikováno v:
IEEE Transactions on Electron Devices, vol 68, iss 4
Doped-multilayer-graphene (DMLG) interconnects employing the subtractive-etching (SE) process have opened a new pathway for designing interconnects at advanced technology nodes, where conventional metal wires suffer from significant resistance increa
Correction to: Two-dimensional materials enabled next-generation low-energy compute and connectivity
Autor:
Arnab Pal, Kunjesh Agashiwala, Junkai Jiang, Dujiao Zhang, Tanmay Chavan, Ankit Kumar, Chao-Hui Yeh, Wei Cao, Kaustav Banerjee
Publikováno v:
MRS Bulletin.
Publikováno v:
IEEE Transactions on Electron Devices, vol 68, iss 4
Conventional designs of the extensively studied resistive-random access-memory (RRAM) cell involve one transistor and one RRAM—“1T1R,” i.e., two separate devices thereby constraining its integration density. In this work, we overcome this longs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ac49ed2835880d61f20342a553cc3909
https://escholarship.org/uc/item/0411s63z
https://escholarship.org/uc/item/0411s63z
Autor:
Dujiao Zhang, Xinyu Gao, Zongyou Yin, Guodong Meng, Kejing Wang, Yonghong Cheng, Nan Li, Feihong Wu, Qi Ying
Publikováno v:
Journal of Materials Chemistry C. 7:1871-1879
The outstanding thermal properties, mechanical properties and large optical bandgap of hexagonal boron nitride (h-BN) make it very attractive for various applications in ultrathin 2D microelectronics. However, the synthesis of large lateral size and
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
In this work, we experimentally demonstrate, in a manufacture-friendly process, a hybrid memory device to replace the traditional 1T1R memory unit that is composed of one-transistor and one-resistive-random-access-memory (RRAM), i.e., two separate de
Reliability and Performance of CMOS-Compatible Multi-Level Graphene Interconnects Incorporating Vias
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Doped-multilayer-graphene (DMLG) interconnects employing the subtractive-etching (SE) process have opened a new pathway for designing interconnects for extremely scaled dimensions [1],[2]. Even though single-level scaled graphene wires have been demo
Publikováno v:
2018 28th International Symposium on Discharges and Electrical Insulation in Vacuum (ISDEIV).
Vacuum breakdown at nanoscale are drawing more and more attractions due to the dramatic shrink of the feature size for the vacuum microelectronic devices in space environment and other fields, which demands a further exploring on the fundamental prop
Publikováno v:
2018 IEEE 2nd International Conference on Dielectrics (ICD).
Publikováno v:
2018 IEEE 2nd International Conference on Dielectrics (ICD).
Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap $( 5.2 \sim 5.9$ eV) which has high breakdown strength. To synthesize h-BN films, chemical vapor deposition (CVD) method is proved to be an effective method that al