Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Duheon Song"'
Publikováno v:
Light: Science & Applications, Vol 12, Iss 1, Pp 1-4 (2023)
Externí odkaz:
https://doaj.org/article/c077b369cceb4d74b219d34fd96c97e1
Autor:
Ki-Tae Park, Jin-man Han, Daehan Kim, Sangwan Nam, Kihwan Choi, Min-Su Kim, Pansuk Kwak, Doosub Lee, Yoon-He Choi, Kyung-Min Kang, Myung-Hoon Choi, Dong-Hun Kwak, Hyun-wook Park, Sang-won Shim, Hyun-Jun Yoon, Doohyun Kim, Sang-won Park, Kangbin Lee, Kuihan Ko, Dong-Kyo Shim, Yang-Lo Ahn, Jeunghwan Park, Jinho Ryu, Donghyun Kim, Kyungwa Yun, Joonsoo Kwon, Seunghoon Shin, Dongkyu Youn, Won-Tae Kim, Taehyun Kim, Sung-Jun Kim, Sungwhan Seo, Hyung-Gon Kim, Dae-Seok Byeon, Hyang-Ja Yang, Moosung Kim, Myong-Seok Kim, Jinseon Yeon, Jaehoon Jang, Han-Soo Kim, Woonkyung Lee, Duheon Song, Sungsoo Lee, Kye-Hyun Kyung, Jeong-Hyuk Choi
Publikováno v:
2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::750e09b1dd1374087aa3b83666c3e6c9
https://doi.org/10.1109/isscc.2014.6757458
https://doi.org/10.1109/isscc.2014.6757458
Publikováno v:
Solid-State Electronics. 39:923-927
In this work, the hot carrier degradation behavior of the halo doped MOSFETs is investigated and an optimized halo design, taking into account the hot carrier reliability, is proposed. Conventional LDD MOSFETs and halo MOSFETs with the variations in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f6a7739ccd6cbc35a84c4550ef78ec3
https://doi.org/10.1016/0038-1101(95)00201-4
https://doi.org/10.1016/0038-1101(95)00201-4
Publikováno v:
ECS Meeting Abstracts. :3907-3907
We investigated hot hole-induced degradation in HV pMOSFETs. When the electric field between gate and channel is negatively higher than 6 MV/cm, an additional shift of sub-threshold swing leads to the shift of threshold voltage due to Fowler-Nordheim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f61531848b0abf2b310d75e6cc3ba0af
https://doi.org/10.1149/ma2016-02/53/3907
https://doi.org/10.1149/ma2016-02/53/3907
Publikováno v:
ECS Meeting Abstracts. :1872-1872
We investigated the degradation characteristics of High-voltage (HV) P-type Metal-oxide-semiconductor field effect transistors (P-MOSFETs) during negatively AC stress. The threshold voltage is shifted by degradation during the highly-negative gate bi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a2e728d8a54f241051c75660fa2b886
https://doi.org/10.1149/ma2015-02/47/1872
https://doi.org/10.1149/ma2015-02/47/1872
Publikováno v:
1999 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.99CH36325).
By utilizing not only the suitable topology generated by underlying layers but also advanced processes such as poly-oxide CMP, highly selective etch, PR (photoresist) thermal flowing, etc., a giga bit level DRAM was successfully integrated with suffi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fd6ff7a62a2ae1275f4f06a52c89cb9
https://doi.org/10.1109/vlsit.1999.799328
https://doi.org/10.1109/vlsit.1999.799328
Publikováno v:
Proceedings of 1995 IEEE International Reliability Physics Symposium; 1995, p271-275, 5p
Autor:
Sungsam Lee, Jongchul Park, Kwangwoo Lee, Sungho Jang, Junho Lee, Hyunsook Byun, Ilgweon Kim, Yongjin Choi, Myoungseob Shim, Duheon Song, Joosung Park, Taewoo Lee, Dongho Shin, Gyoyoung Jin, Kinam Kim
Publikováno v:
ESSDERC 2007 - 37th European Solid State Device Research Conference; 2007, p327-329, 3p
Publikováno v:
1999 Symposium on VLSI Technology Digest of Technical Papers (IEEE Cat No99CH36325); 1999, p37-38, 2p
Publikováno v:
Japanese Journal of Applied Physics; Nov2016, Vol. 55 Issue 11, p1-1, 1p