Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Dueñas Carazo, Salvador"'
Autor:
Vinuesa Sanz, Guillermo, García García, Héctor, Lendínez Sánchez, José Miguel, García Ochoa, Eduardo, González, M. B., Maldonado, D, Aguilera Pedregosa, C, Moreno, E, Jiménez Molinos, Francisco, Roldán, J.B., Campabadal Segura, Francesca, Castán Lanaspa, María Helena, Dueñas Carazo, Salvador
Producción Científica
In this work, the unipolar resistive switching behaviour of Ni/HfO2/Si(n+) devices is studied. The structures are characterized using both current and voltage sweeps, with the device resistance and its cycle-to-cycle vari
In this work, the unipolar resistive switching behaviour of Ni/HfO2/Si(n+) devices is studied. The structures are characterized using both current and voltage sweeps, with the device resistance and its cycle-to-cycle vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f292384685b5d46b753300c42183f09
https://doi.org/10.1016/j.mee.2023.112008
https://doi.org/10.1016/j.mee.2023.112008
Autor:
García García, Héctor, Jiménez Molinos, Francisco, Vinuesa Sanz, Guillermo, Bargalló González, Mireia, Roldán, Juan B., Miranda, Enrique, Campabadal Segura, Francesca, Castán Lanaspa, María Helena, Dueñas Carazo, Salvador
Publikováno v:
Solid-State Electronics. 194:108385
Producción Científica
In this work, we have studied the control of set and the reset transitions in TiN/Ti/HfO2/W resistive switching devices using a new approach based on the injection of a limited amount of charge through the use of a capaci
In this work, we have studied the control of set and the reset transitions in TiN/Ti/HfO2/W resistive switching devices using a new approach based on the injection of a limited amount of charge through the use of a capaci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dd5e5aff1f144cd310e9a51955027470
https://doi.org/10.1016/j.sse.2022.108385
https://doi.org/10.1016/j.sse.2022.108385
Autor:
Pérez, Eduardo, González Ossorio, Óscar, Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, García García, Héctor, Wenger, Christian
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
Electronics
Volume 9
Issue 5
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
Electronics, Vol 9, Iss 864, p 864 (2020)
instname
Electronics
Volume 9
Issue 5
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
Electronics, Vol 9, Iss 864, p 864 (2020)
Producción Científica
A crucial step in order to achieve fast and low-energy switching operations in resistive random access memory (RRAM) memories is the reduction of the programming pulse width. In this study, the incremental step pulse with
A crucial step in order to achieve fast and low-energy switching operations in resistive random access memory (RRAM) memories is the reduction of the programming pulse width. In this study, the incremental step pulse with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fbe9ec425286b1ec9935e303c89fae6e
https://doi.org/10.3390/electronics9050864
https://doi.org/10.3390/electronics9050864
Autor:
González Ossorio, Óscar, Poblador Cester, Samuel, Vinuesa Sanz, Guillermo, Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, Maestro Izquierdo, Marcos, Bargalló González, Mireia, Campabadal Segura, Francesca
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
Producción Científica Three topologies of TiN/Ti/HfO 2 /W resistive switching memories (RRAM) are proposed in this work: crossbar, isolated and isolated-crossbar configurations. All configurations use the same sequence of technological processes. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=RECOLECTA___::69d64be45f133cb1a00c0e5688c71048
https://doi.org/10.1109/LAEDC49063.2020.9073596
https://doi.org/10.1109/LAEDC49063.2020.9073596
Autor:
González Ossorio, Óscar, Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, Tamm, Aile, Kalam, Kristjan, Seemen, Helina, Kukli, Kaupo
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
Producción Científica In this work we study the resistive switching properties of ZrO 2 -HfO 2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states and an overall good repetitiveness, expressed in terms of DC and AC
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=RECOLECTA___::8d5ed4e489e76b4b21b5d6d25f21532e
http://uvadoc.uva.es/handle/10324/44677
http://uvadoc.uva.es/handle/10324/44677
Autor:
González Ossorio, Óscar, Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, Tamm, Aile, Kalam, Kristjan, Seemen, Helina, Kukli, Kaupo
Producción Científica
In this work we study the resistive switching properties of ZrO 2 -HfO 2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states and an overall good repetitiveness, expressed in terms of DC an
In this work we study the resistive switching properties of ZrO 2 -HfO 2 based Metal-Insulator-Metal (MIM) devices. We observed different intermediate states and an overall good repetitiveness, expressed in terms of DC an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______1514::f3e361bec897b85da32cd5c0f300a2be
https://doi.org/10.1109/cde.2018.8596925
https://doi.org/10.1109/cde.2018.8596925
Autor:
Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, González Ossorio, Óscar, Domínguez, Leidy Azucena, García García, Héctor, Kalam, Kristjan, Kukli, Kaupo, Ritala, Mikko, Leskelä, Markku
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
instname
UVaDOC: Repositorio Documental de la Universidad de Valladolid
Universidad de Valladolid
Producción Científica The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the intermedi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2bbff9f0a2f8a32b2c53df9f03bb311e
https://doi.org/10.1109/DCIS.2017.8311627
https://doi.org/10.1109/DCIS.2017.8311627
Autor:
Dueñas Carazo, Salvador, Castán Lanaspa, María Helena, González Ossorio, Óscar, Domínguez, Leidy Azucena, García García, Héctor, Kalam, Kristjan, Kukli, Kaupo, Ritala, Mikko, Leskelä, Markku
Producción Científica
The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the inte
The resistive switching behavior of Ta 2 O 5 -ZrO 2 -based metal-insulator-metal devices was studied. Asymmetrical and repetitive current-voltage loops were observed. Excellent control of admittance parameters in the inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::3ffdf57701fd03a591911a89e04f26d2
http://hdl.handle.net/10138/310756
http://hdl.handle.net/10138/310756
Publikováno v:
UVaDOC. Repositorio Documental de la Universidad de Valladolid
instname
instname
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9d6d2550ce14b492d3a4b8f1d8f6ce94
Publikováno v:
Studia Historica. Historia Medieval, Vol 24, Iss 0 (2009)
GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname
GREDOS. Repositorio Institucional de la Universidad de Salamanca
instname
[ES] En este artículo se somete a revisión la incidencia de la Peste Negra de 1348 en Navarra, confrontando los datos empíricos que diversos autores han facilitado con un modelo matemático de población. Esta confrontación, así como las informa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::114f04a57238aa39e0ebe609f195dc46
https://revistas.usal.es/index.php/Studia_H_Historia_Medieval/article/view/4529
https://revistas.usal.es/index.php/Studia_H_Historia_Medieval/article/view/4529