Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Duc Tai Tong"'
Autor:
An Hoang Thuy Nguyen, Jae Won Choi, Dong Hwi Lee, Rino Choi, Soo Yeun Han, Duc Tai Tong, Hyun Jun Bang, Sol Kang, Manh Cuong Nguyen
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:10337-10340
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c655ef639f56405295a271c1737702e3
https://doi.org/10.1166/jnn.2016.13155
https://doi.org/10.1166/jnn.2016.13155
Autor:
Hoichang Yang, Musarrat Hasan, Duc-Tai Tong, Hyun-Joon Bang, Seung-Won You, Manh-Cuong Nguyen, Jae Kyeong Jeong, Dong Hwi Lee, Rino Choi
Publikováno v:
Microelectronic Engineering. 147:27-30
Display Omitted We fabricated low temperature solution-based the In2O3/ZrO2 TFTs.Li doping enhances the crystallization of low-temperature solution-based In2O3.Enhanced crystallization of In2O3 reduces the inter-diffusion of In and Zr.Li doping incre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::944bfa69126754071522e8f5db41eacc
https://doi.org/10.1016/j.mee.2015.04.060
https://doi.org/10.1016/j.mee.2015.04.060
Autor:
Seung Won You, Dong Hwi Lee, Yoon Seok Jeon, Rino Choi, Musarrat Hasan, Hyo Jin Kim, Duc Tai Tong, Jae Kyeong Jeong, Manh Cuong Nguyen
Publikováno v:
Thin Solid Films. 589:90-94
This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6880f2b45cf3c82ae08c4f1e67896806
https://doi.org/10.1016/j.tsf.2015.04.035
https://doi.org/10.1016/j.tsf.2015.04.035
Autor:
Ki-Hyun Hwang, Seung Won You, Ahn Jae Young, Yoon Seok Jeon, Rino Choi, Jae Kyeong Jeong, Manh Cuong Nguyen, Duc Tai Tong, Bio Kim
Publikováno v:
Solid-State Electronics. 104:86-89
The trap distribution of a polysilicon (poly-Si) channel in a metal–oxide–semiconductor field effect transistor (MOSFET) was extracted successfully using a variable amplitude charge pumping method (VACP) and an energy band bending model. Compared
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54ec0b9d1fa66c0dcdb547b211917558
https://doi.org/10.1016/j.sse.2014.11.015
https://doi.org/10.1016/j.sse.2014.11.015
Autor:
Duc Tai Tong, Yoon Seok Jeon, Hyun Joon Bang, Jae Kyoung Jeong, Seung Won You, Rino Choi, Manh Cuong Nguyen, Dong Hwi Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 15:7590-7592
Metal-oxide-semiconductor field effect transistors (MOSFETs) with various doses of La-incorporated in Hafnium-based dielectrics were characterized to evaluate the effect of La on dielectric and device properties. It is found that the Poole-Frenkel em
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8da3dff2b40a0d600cebfb376a7faf3c
https://doi.org/10.1166/jnn.2015.11165
https://doi.org/10.1166/jnn.2015.11165
Akademický článek
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Publikováno v:
Advances in Natural Sciences: Nanoscience and Nanotechnology. 4:045012
Graphene, consisting of a single carbon layer in a two-dimensional (2D) lattice, has been a promising material for application to nanoelectrical devices in recent years. In this study we report the development of a useful ammonia (NH3) gas sensor bas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fec18b2a98bd17ff06fcb791ae8b188
https://doi.org/10.1088/2043-6262/4/4/045012
https://doi.org/10.1088/2043-6262/4/4/045012
Akademický článek
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