Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Duanyang Chen"'
Autor:
Zhenni Yang, Wenshan Chen, Siliang Kuang, Ziqian Sheng, Jueli Shi, Duanyang Chen, Meiyan Cui, Hongji Qi, Kelvin H. L. Zhang
Publikováno v:
Crystal Growth & Design. 22:7325-7330
Publikováno v:
Applied Physics Letters. 122
β-Ga2O3 is attracting considerable attention for applications in power electronics and deep ultraviolet (DUV) optoelectronics owing to the ultra-wide bandgap of 4.85 eV and amendable n-type conductivity. In this work, we report the achievement of Si
Autor:
Xiangyu Xu, Ziqian Sheng, Jueli Shi, Xin Chen, Yaxin He, Wenjing Xu, Xu Zhang, Duanyang Chen, Hongji Qi, Kelvin H. L. Zhang
Publikováno v:
Advanced Optical Materials.
Publikováno v:
CrystEngComm. 24:5588-5596
Strategy for realizing the tunability of the effective carrier concentration of β-Ga2O3 single crystals using V as a dopant.
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
Materials Science in Semiconductor Processing. 153:107159
Autor:
Baizhong Li, Pengkun Li, Lu Zhang, Ruifeng Tian, Qinglin Sai, Mingyan Pan, Bin Wang, Duanyang Chen, Youchen Liu, Changtai Xia, Hongji Qi
Publikováno v:
Chinese Optics Letters. 21:041605
Publikováno v:
Journal of Applied Physics. 132:185704
Monoclinic gallium oxide ( β-Ga2O3) has attracted much attention from the fields of optoelectronic and electronic devices owing to the properties of wide bandgap, great breakdown field strength, as well as the economic advantages of low-cost growth
Publikováno v:
Journal of Alloys and Compounds. 908:164590