Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Duan-Li Deng"'
Autor:
Sk Ziaur Rahaman, Yu-Chen Hsin, Shan-Yi Yang, Yao-Jen Chang, Hsin-Han Lee, Kuan-Ming Chen, I-Jung Wang, Guan-Long Chen, Yi-Hui Su, Cheng-Yi Shih, Shih-Ching Chiu, Chih-Yao Wang, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Duan-Li Deng, Shih-Chieh Chang
Publikováno v:
2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9cec1d757d0b2200f68227d8efc41127
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134109
https://doi.org/10.1109/vlsi-tsa/vlsi-dat57221.2023.10134109
Autor:
Ziaur Rahaman Sk, Yao-Jen Chang, Yu-Chen Hsin, Shan-Yi Yang, Hsin-Han Lee, I-Jung Wang, Guan-Long Chen, Yi-Hui Su, Jeng-Hua Wei, Shyh-Shyuan Sheu, Wei-Chung Lo, Duan-Li Deng, Shih-Chieh Chang
Publikováno v:
Journal of Magnetism and Magnetic Materials. 565:170296
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::786059307ba075436dfdbc76793250f6
https://doi.org/10.1016/j.jmmm.2022.170296
https://doi.org/10.1016/j.jmmm.2022.170296
Autor:
Ding-Yeong Wang, Yao-Jen Chang, Shan-Yi Yang, Chih-I Wu, I-Jung Wang, Yi-Ching Kuo, Yi-Hui Su, H. Y. Lee, Duan-Li Deng, Keh-Ching Huang, S. Z. Rahaman, Tian-Yue Chen, Yu-Chen Hsin, Chi-Feng Pai, Yu-Sheng Chen, Jeng-Hua Wei
Publikováno v:
IEEE Electron Device Letters. 39:1306-1309
In this letter, we present a novel step spin-orbit torque magnetic random access memory (SOT-MRAM) cell structure and its switching behavior. A special stop-on-MgO etch etches away the hard mask and the pinned layer while retaining the free layer (FL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c34eb65bb837b21ca24a5098c8fbfb1f
https://doi.org/10.1109/led.2018.2856518
https://doi.org/10.1109/led.2018.2856518
Autor:
Sheng-Huang Huang, Ding-Yeong Wang, Jia-Hong Shyu, Cheng-Wei Chien, Keng-Ming Kuo, Tzu-Kun Ku, Kuei-Hung Shen, Shan-Yi Yang, Duan-Li Deng
Publikováno v:
2015 International Symposium on VLSI Technology, Systems and Applications.
This study shows a clear correlation between back hopping, write error rate, bias-dependent coercivity (Hc) and the switching phase diagram (SPD) of p-MTJs. Data support that the bias-induced fieldlike torque, in addition to the Slonczewski anti-damp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ea925863841cfc8cbd0c210ce58b218
https://doi.org/10.1109/vlsi-tsa.2015.7117565
https://doi.org/10.1109/vlsi-tsa.2015.7117565
Autor:
Cheng-Wei Chien, Ding-Yeong Wang, Young-Shying Chen, Jia-Hong Shyu, Keng-Ming Kuo, Sheng-Huang Huang, Shan-Yi Yang, Duan-Li Deng, Kuei-Hung Shen, Tzu-Kun Ku, Yung-Hung Wang
Publikováno v:
Proceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA).
We had built and studied the size scaling effect of perpendicular magnetic tunnel junctions (p-MTJs) with dual MgO/CoFeB interface and step-etch structure. Although the spin-torque-transfer (STT) switching current reduces with MTJ area, the current d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47870befdf870735f1ae6c20073adb91
https://doi.org/10.1109/vlsi-tsa.2014.6839662
https://doi.org/10.1109/vlsi-tsa.2014.6839662
Autor:
Ding-Yeong Wang, Keng-Ming Kuo, Cheng-Wei Chien, Shan-Yi Yang, Sheng-Huang Huang, Yung-Hung Wang, Duan-Li Deng, Kuei-Hung Shen
Publikováno v:
2012 International Electron Devices Meeting.
For the first time, we show the stray field (Hs) from the pinned layer of perpendicular magnetic tunnel junctions (pMTJs) plays multiple important roles: its out-of-plane component degrades pinned layer stability of scaled MTJ, while its in-plane com
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4d18ffadba0324f41193043496c2e0a
https://doi.org/10.1109/iedm.2012.6479127
https://doi.org/10.1109/iedm.2012.6479127