Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Duan-Chen Peng"'
Autor:
Xiao-Ying Zhang, Duan-Chen Peng, Jia-Hao Yan, Zhi-Xuan Zhang, Yu-Jiao Ruan, Juan Zuo, An Xie, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Feng-Min Lai, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Journal of Materials Research and Technology, Vol 27, Iss , Pp 4213-4223 (2023)
Aluminum nitride (AlN) film is a promising material which is used in various fields. In this study, AlN films with different plasma powers were grown by remote plasma atomic layer deposition. Saturation experiments have been applied in the plasma pow
Externí odkaz:
https://doaj.org/article/e0435603c1124616b41be1f7f8e15e96
Autor:
Xiao-Ying Zhang, Jing Han, Duan-Chen Peng, Yu-Jiao Ruan, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Nanomaterials, Vol 12, Iss 21, p 3890 (2022)
Hafnium oxide (HfO2) thin film has remarkable physical and chemical properties, which makes it useful for a variety of applications. In this work, HfO2 films were prepared on silicon through plasma enhanced atomic layer deposition (PEALD) at various
Externí odkaz:
https://doaj.org/article/cfee17d1eada4758b8efe25bd0c62182
Autor:
Xiao-Ying Zhang, Duan-Chen Peng, Jing Han, Fang-Bin Ren, Shi-Cong Jiang, Ming-Chun Tseng, Yu-Jiao Ruan, Juan Zuo, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Shui-Yang Lien, Wen-Zhang Zhu
Publikováno v:
Surfaces and Interfaces. 36:102589
Autor:
Zhi-Xuan Zhang, Ming-Jie Zhao, Duan-Chen Peng, Pao-Hsun Huang, Shui-Yang Lien, Chien-Jung Huang, Wan-Yu Wu, Wen-Zhang Zhu, Chia-Hsun Hsu
Publikováno v:
Optical Materials. 121:111621
In this paper, indium oxide (In2O3) thin films are prepared by plasma-enhanced atomic layer deposition (PEALD) using cyclopentadienylindium(I) (InCp) as the metal precursor and O2 plasma as the oxidant. The mechanism and effects of annealing temperat