High-energy all-solid-state lithium batteries enabled by Co-free LiNiO 2 cathodes with robust outside-in structures.

Autor: Wang L; Department of Chemistry and Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel.; Department of Materials, University of Oxford, Oxford, UK., Mukherjee A; Department of Chemistry and Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel.; CSIR-Institute of Minerals and Materials Technology, Bhubaneswar, India., Kuo CY; National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Republic of China.; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan, Republic of China., Chakrabarty S; Department of Chemistry and Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel., Yemini R; Department of Chemistry and Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel., Dameron AA; Forge Nano Inc, Thornton, CO, USA., DuMont JW; Forge Nano Inc, Thornton, CO, USA., Akella SH; Department of Chemistry and Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel., Saha A; Department of Chemistry and Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel., Taragin S; Department of Chemistry and Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel., Aviv H; Department of Chemistry and Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel., Naveh D; Department of Chemistry and Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel., Sharon D; Institute of Chemistry, The Hebrew University of Jerusalem, Jerusalem, Israel., Chan TS; National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Republic of China., Lin HJ; National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Republic of China., Lee JF; National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Republic of China., Chen CT; National Synchrotron Radiation Research Center, Hsinchu, Taiwan, Republic of China., Liu B; Department of Materials, University of Oxford, Oxford, UK., Gao X; Department of Materials, University of Oxford, Oxford, UK., Basu S; Department of Chemical Engineering, Indian Institute of Technology Delhi, Delhi, India., Hu Z; Max Planck Institute for Chemical Physics of Solids, Dresden, Germany. Zhiwei.Hu@cpfs.mpg.de., Aurbach D; Department of Chemistry and Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel. Doron.Aurbach@biu.ac.il., Bruce PG; Department of Materials, University of Oxford, Oxford, UK., Noked M; Department of Chemistry and Bar-Ilan Institute of Nanotechnology and Advanced Materials, Bar-Ilan University, Ramat Gan, Israel. Malachi.Noked@biu.ac.il.

Publikováno v: Nature nanotechnology [Nat Nanotechnol] 2024 Feb; Vol. 19 (2), pp. 208-218. Date of Electronic Publication: 2023 Oct 05.

Competition between Al 2 O 3 atomic layer etching and AlF 3 atomic layer deposition using sequential exposures of trimethylaluminum and hydrogen fluoride.

Autor: DuMont JW; Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215, USA., George SM; Department of Chemistry and Biochemistry, University of Colorado, Boulder, Colorado 80309-0215, USA.

Publikováno v: The Journal of chemical physics [J Chem Phys] 2017 Feb 07; Vol. 146 (5), pp. 052819.