Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Du-Yeul Kim"'
Publikováno v:
Progress in Photovoltaics: Research and Applications. 10:47-53
Buried contact solar cells (BCSC) have been fabricated on boron-doped p-type tricrystalline Czochralski silicon wafers (Tri-Si) and the output characteristics were compared with those of multi-crystalline silicon wafers and single crystalline Czochra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5934e80110f0bfba7634a71f5c8f4884
https://doi.org/10.1002/pip.400
https://doi.org/10.1002/pip.400
Publikováno v:
Journal of Materials Science: Materials in Electronics. 12:619-622
Multicrystalline silicon wafers were isotropically textured using two kinds of modified acid texturing methods. One of the modifications is based on the introduction of the spray deposition method into the conventional acid etching of Si wafers. Sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e5135ddf35ee3d49d5b47254a3cb31
https://doi.org/10.1023/a:1012824115191
https://doi.org/10.1023/a:1012824115191
Autor:
Du Yeul Kim, Young Soo Sohn, Jeong Hoon Kook, Kye Hyun Kyung, Chi Wook Kim, Soo In Cho, Jei Hwan Yoo, Jung Sunwoo, Jae-Hyung Lee, Jun Hyung Kim, Jae-Young Lee, Sung Min Seo, Sang Pyo Hong, Chul Soo Kim, Hi Choon Lee, Byung-Hoon Jeong
Publikováno v:
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005..
A 1.8V, 800Mbit/s/pin, 2GB DDR2 SDRAM is developed using an 80nm triple metal technology. With the triple metal technology, NMOS precharge I/O scheme and statistical analysis, DDR800 4-4-4 performance is achieved at 1.8V. For mass production, a high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f692f4c50de0de8cd2e67fb45b82f12
https://doi.org/10.1109/isscc.2005.1494072
https://doi.org/10.1109/isscc.2005.1494072
Autor:
Kye Hyun Kyung, Chi Wook Kim, Jae Young Lee, Jeong Hoon Kook, Sung Min Seo, Du Yeul Kim, Jun Hyung Kim, Jung Sunwoo, Hi Choon Lee, Chul Soo Kim, Byung Hoon Jeong, Young Soo Sohn, Sang Pyo Hong, Jae Hyung Lee, Jei Hwan Yoo, Soo In Cho
Publikováno v:
ISSCC. 2005 IEEE International Digest of Technical Papers. Solid-State Circuits Conference, 2005; 2005, p468-468, 1p