Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Du Binh Nguyen"'
Autor:
Terry A. Spooner, Kaushik Chanda, Birendra N. Agarwala, Timothy J. Dalton, Jason Gill, Edward C. Cooney, C.-C. Yang, Daniel C. Edelstein, Clevenger Leigh Anne H, Andy Cowley, A. Simon, A.K. Stamper, Du Binh Nguyen
Publikováno v:
Proceedings of the IEEE 2005 International Interconnect Technology Conference, 2005..
The paper describes a new physical vapor deposition (PVD) metallization scheme that shows a better extendibility for future technology nodes as compared to the conventional scheme. In addition to reducing the thicknesses of both the diffusion barrier
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e3d7de4aec2387e3f07b927fcd85003
https://doi.org/10.1109/iitc.2005.1499954
https://doi.org/10.1109/iitc.2005.1499954
Autor:
W.-K. Li, Chester T. Dziobkowski, Stephan A. Cohen, Michael Lane, K. Ida, C.-C. Yang, Jeremy L. Martin, S. Vogt, T. Van Kleeck, Jason Gill, David L. Questad, Philip L. Flaitz, William F. Landers, X.-H. Liu, Christopher D. Muzzy, T. Ivers, T. Shaw, Kaushik Chanda, J. Wright, M. Cullinan, Takeshi Nogami, A. Sakamoto, Son Nguyen, Larry Clevenger, W. Cote, M. Yoon, A. Cowley, S. Tempest, Charles R. Davis, Daniel C. Edelstein, David P. Klaus, James J. Demarest, Andrew H. Simon, Swastika N. Das, Anita Madan, C. Parks, Stephen M. Gates, W. Wille, Darryl D. Restaino, John A. Fitzsimmons, S. Molis, Du Binh Nguyen, R. G. Filippi, Birendra N. Agarwala, D. Hawken, S. Arai, M. Ono, N. Klymko, Y.-H. Lin, A. Carbone, Joe Lee, Hazara S. Rathore, Derren N. Dunn, Alfred Grill, Eric G. Liniger, S. Lane, Y. Shimooka, Yanfeng Wang, Sandra G. Malhotra, Timothy J. Dalton, P. Davis, E. Simonyi
Publikováno v:
Proceedings of the IEEE 2004 International Interconnect Technology Conference (IEEE Cat. No.04TH8729).
We report a comprehensive characterization of a 90 nm CMOS technology with Cu/SiCOH low-k interconnect BEOL. Significant material and integration engineering have led to the highest reliability, without degrading the performance expected from low-k.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7517d96a0646167b24ad2d088b95274a
https://doi.org/10.1109/iitc.2004.1345750
https://doi.org/10.1109/iitc.2004.1345750
Publikováno v:
Proceedings of the IEEE 1999 International Interconnect Technology Conference (Cat. No.99EX247).
Electromigration in on-chip plated Cu damascene interconnections has been investigated for metal line widths from 0.24 /spl mu/m to 1.3 /spl mu/m. Void growth at the cathode end and protrusions at the anode end of the lines have been found to be the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::edb8fbc4ec8a97408bc32e8378a0eb0a
https://doi.org/10.1109/iitc.1999.787140
https://doi.org/10.1109/iitc.1999.787140
Autor:
Cyprian E. Uzoh, Du Binh Nguyen, Daniel C. Edelstein, Sandra G. Malhotra, Andrew H. Simon, H. Rathore, Cyril Cabral, Patrick W. DeHaven, P. Buchwalter, David P. Klaus, B. Agarwala, Edward C. Cooney
Publikováno v:
Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461).
We describe a liner for Cu-Damascene multilevel ULSI interconnects, which satisfies all the important requirements for a high performance and reliable Cu interconnect technology. This liner is implemented in the first manufacturing process to produce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf6f85b0432f4cca83723549f4838395
https://doi.org/10.1109/iitc.2001.930001
https://doi.org/10.1109/iitc.2001.930001