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pro vyhledávání: '"Dshkhunyan, V. L."'
Publikováno v:
Russian Microelectronics, 2003, V.32, N 1, P. 51
A hierarchical approach to the construction of compound distributions for process-induced faults in IC manufacture is proposed. Within this framework, the negative binomial distribution and the compound binomial distribution are treated as level-1 mo
Externí odkaz:
http://arxiv.org/abs/physics/0303039
Akademický článek
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Autor:
Dem'yanenko, M. A.1 (AUTHOR) demyanenko@isp.nsc.ru, Startsev, V. V.2 (AUTHOR)
Publikováno v:
Technical Physics. 2023 Suppl 2, Vol. 68, pS328-S337. 10p.
Publikováno v:
Scopus-Elsevier
A hierarchical approach to the construction of compound distributions for process-induced faults in IC manufacture is proposed. Within this framework, the negative binomial distribution and the compound binomial distribution are treated as level-1 mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94e630f3b99e3863b7a36a9801907f6e
http://www.scopus.com/inward/record.url?eid=2-s2.0-0037273651&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0037273651&partnerID=MN8TOARS
Autor:
Mikhailova, M.1 shunya2000@mail.ru, Roshchin, V.1, Shilyaeva, Yu.1, Petukhov, I.1, Fedorov, V.2
Publikováno v:
Inorganic Materials. Dec2016, Vol. 52 Issue 12, p1220-1223. 4p.
Publikováno v:
Russian Microelectronics; Dec2017, Vol. 46 Issue 7, p454-457, 4p
Publikováno v:
Russian Microelectronics; Sep2016, Vol. 45 Issue 5, p324-328, 5p