Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Dshkhunyan, V."'
Publikováno v:
Russian Microelectronics, 2003, V.32, N 1, P. 51
A hierarchical approach to the construction of compound distributions for process-induced faults in IC manufacture is proposed. Within this framework, the negative binomial distribution and the compound binomial distribution are treated as level-1 mo
Externí odkaz:
http://arxiv.org/abs/physics/0303039
Autor:
Roshchin, V.1 Impetus@nm.ru, Dshkhunyan, V.2, Petukhov, I.1, Sen'chenko, K.1, Kukhtyaeva, V.1
Publikováno v:
Inorganic Materials. Mar2015, Vol. 51 Issue 3, p294-298. 5p.
Publikováno v:
Russian Microelectronics; Sep2016, Vol. 45 Issue 5, p324-328, 5p
Publikováno v:
Russian Microelectronics; Jan2003, Vol. 32 Issue 1, p51-62, 12p
Publikováno v:
Scopus-Elsevier
A hierarchical approach to the construction of compound distributions for process-induced faults in IC manufacture is proposed. Within this framework, the negative binomial distribution and the compound binomial distribution are treated as level-1 mo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94e630f3b99e3863b7a36a9801907f6e
http://www.scopus.com/inward/record.url?eid=2-s2.0-0037273651&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0037273651&partnerID=MN8TOARS