Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Druzhinin A. O."'
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3-4, Pp 3-9 (2019)
The authors investigate deformation-induced changes in the electrophysical parameters of the indium antimonide microcrystals at cryogenic temperatures in strong magnetic fields up to 10 T. It is determined that for strongly doped InSb microcrystals,
Externí odkaz:
https://doaj.org/article/f28a84af686945daaae4ec10de73f259
Publikováno v:
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 3-4, Pp 26-30 (2019)
The paper presents a study of tensoresistive characteristics of p-type GaP whiskers with [111] crystallographic orientation coinciding with the direction of the maximal piezoresistive effect for this material. The authors present a newly-developed te
Externí odkaz:
https://doaj.org/article/525c3b2f71024574ae9df6055049c7a8
Autor:
Druzhinin, A. O.1 druzh@polynet.lviv.ua, Ostrovskii, I. P.1, Khoverko, Yu. M.1, Koretskii, R. M.1
Publikováno v:
Journal of Physical Studies. 2012, Vol. 16 Issue 3, p3703-1-3703-4. 4p.
Publikováno v:
Proceedings of SPIE; Nov1996, Issue 1, p579-584, 6p
Publikováno v:
Proceedings of SPIE; Nov1993, Issue 1, p66-76, 11p
Publikováno v:
Proceedings of SPIE; Nov1993, Issue 1, p53-64, 12p
Publikováno v:
Proceedings of SPIE; Nov1993, Issue 1, p449-464, 16p