Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Droulers G"'
Autor:
Zwerver, A. M. J., Krähenmann, T., Watson, T. F., Lampert, L., George, H. C., Pillarisetty, R., Bojarski, S. A., Amin, P., Amitonov, S. V., Boter, J. M., Caudillo, R., Corras-Serrano, D., Dehollain, J. P., Droulers, G., Henry, E. M., Kotlyar, R., Lodari, M., Luthi, F., Michalak, D. J., Mueller, B. K., Neyens, S., Roberts, J., Samkharadze, N., Zheng, G., Zietz, O. K., Scappucci, G., Veldhorst, M., Vandersypen, L. M. K., Clarke, J. S.
Publikováno v:
Nature Electronics 5, 184-190 (2022)
Full-scale quantum computers require the integration of millions of quantum bits. The promise of leveraging industrial semiconductor manufacturing to meet this requirement has fueled the pursuit of quantum computing in silicon quantum dots. However,
Externí odkaz:
http://arxiv.org/abs/2101.12650
Autor:
Lawrie, W. I. L., Eenink, H. G. J., Hendrickx, N. W., Boter, J. M., Petit, L., Amitonov, S. V., Lodari, M., Wuetz, B. Paquelet, Volk, C., Philips, S., Droulers, G., Kalhor, N., van Riggelen, F., Brousse, D., Sammak, A., Vandersypen, L. M. K., Scappucci, G., Veldhorst, M.
Publikováno v:
Appl. Phys. Lett. 116, 080501 (2020)
Electrons and holes confined in quantum dots define an excellent building block for quantum emergence, simulation, and computation. In order for quantum electronics to become practical, large numbers of quantum dots will be required, necessitating th
Externí odkaz:
http://arxiv.org/abs/1909.06575
Autor:
Sabbagh, D., Thomas, N., Torres, J., Pillarisetty, R., Amin, P., George, H. C., Singh, K., Budrevich, A., Robinson, M., Merrill, D., Ross, L., Roberts, J., Lampert, L., Massa, L., Amitonov, S., Boter, J., Droulers, G., Eenink, H. G. J., van Hezel, M., Donelson, D., Veldhorst, M., Vandersypen, L. M. K., Clarke, J. S., Scappucci, G.
Publikováno v:
Phys. Rev. Applied 12, 014013 (2019)
We investigate the structural and quantum transport properties of isotopically enriched $^{28}$Si/$^{28}$SiO$_2$ stacks deposited on 300 mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99
Externí odkaz:
http://arxiv.org/abs/1810.06521
Autor:
Petit, L., Boter, J. M., Eenink, H. G. J., Droulers, G., Tagliaferri, M. L. V., Li, R., Franke, D. P., Singh, K. J., Clarke, J. S., Schouten, R. N., Dobrovitski, V. V., Vandersypen, L. M. K., Veldhorst, M.
Publikováno v:
Phys. Rev. Lett. 121, 076801 (2018)
We investigate the magnetic field and temperature dependence of the single-electron spin lifetime in silicon quantum dots and find a lifetime of 2.8 ms at a temperature of 1.1 K. We develop a model based on spin-valley mixing and find that Johnson no
Externí odkaz:
http://arxiv.org/abs/1803.01774
We measured the magnetoresistance as a function of temperature down to 20mK and magnetic field for a set of underdoped PrCeCuO (x=0.12) thin films with controlled oxygen content. This allows us to access the edge of the superconducting dome on the un
Externí odkaz:
http://arxiv.org/abs/1008.1682
Autor:
Zwerver, AMJ, Krähenmann, T, Watson, TF, Lampert, L, George, HC, Pillarisetty, R, Bojarski, SA, Amin, P, Amitonov, SV, Boter, JM, Caudillo, R, Correas-Serrano, D, Dehollain, JP, Droulers, G, Henry, EM, Kotlyar, R, Lodari, M, Lüthi, F, Michalak, DJ, Mueller, BK, Neyens, S, Roberts, J, Samkharadze, N, Zheng, G, Zietz, OK, Scappucci, G, Veldhorst, M, Vandersypen, LMK, Clarke, JS
In the version of this article initially published, D. Correas-Serrano’s surname was shown as Corras-Serrano. The name has been corrected in the HTML and PDF versions of the article.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______363::3fdf728ba0217739b9930b40994647d2
https://hdl.handle.net/10453/159521
https://hdl.handle.net/10453/159521
Akademický článek
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Autor:
Lawrie, W.I.L., Eenink, H.G.J., Hendrickx, N.W., Boter, J.M., Petit, L., Amitonov, S., Lodari, M., Paquelet Wuetz, B., Volk, C.A., Philips, S.G.J., Droulers, G., Kalhor, N., van Riggelen, F., Brousse, D., Sammak, A., Vandersypen, L.M.K., Scappucci, G., Veldhorst, M.
Publikováno v:
Applied Physics Letters, 116(8)
Electrons and holes confined in quantum dots define excellent building blocks for quantum emergence, simulation, and computation. Silicon and germanium are compatible with standard semiconductor manufacturing and contain stable isotopes with zero nuc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::4bcd470f8d487603489f92e4d74d27ca
http://resolver.tudelft.nl/uuid:2d29c18f-9966-4c6a-baf8-5c4277cff92e
http://resolver.tudelft.nl/uuid:2d29c18f-9966-4c6a-baf8-5c4277cff92e
Autor:
Sabbagh, D., Massa, L., Amitonov, S., Boter, J.M., Droulers, G., Eenink, H.G.J., Veldhorst, M., Vandersypen, L.M.K., Scappucci, G.
Publikováno v:
Physical Review Applied, 12(1)
We investigate the structural and quantum transport properties of isotopically enriched Si28/SiO228 stacks deposited on 300-mm Si wafers in an industrial CMOS fab. Highly uniform films are obtained with an isotopic purity greater than 99.92%. Hall-ba
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::cfb8de97ba12c91e478635b0b2b03b6e
http://resolver.tudelft.nl/uuid:8177a142-ae80-43a4-9b5c-6459383aab44
http://resolver.tudelft.nl/uuid:8177a142-ae80-43a4-9b5c-6459383aab44
Akademický článek
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K zobrazení výsledku je třeba se přihlásit.