Zobrazeno 1 - 10
of 149
pro vyhledávání: '"Driussi, Francesco"'
This paper provides a brief introduction to the phenomenological aspects of the polarization in ferrroelectric materials, and then an analysis of a few selected topics related to the modelling of ferroelectrics. The description of ferroelectric-based
Externí odkaz:
http://arxiv.org/abs/2311.03864
An accurate estimate of the ferroelectric polarization in ferroelectric-dielectric stacks is important from a materials science perspective, and it is also crucial for the development of ferroelectric based electron devices. This paper revisits the t
Externí odkaz:
http://arxiv.org/abs/2201.12103
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies
Autor:
Esseni, David, Fontanini, Riccardo, Lizzit, Daniel, Massarotto, Marco, Driussi, Francesco, Loghi, Mirko
The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and modelling perspective. We here revisit the working principle and the mo
Externí odkaz:
http://arxiv.org/abs/2105.00864
Autor:
Fontanini, Riccardo, Massarotto, Marco, Specogna, Ruben, Driussi, Francesco, Loghi, Mirko, Esseni, David
We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a moderately low-k tunnelling dielectric (e.g. SiO2) can increase the read c
Externí odkaz:
http://arxiv.org/abs/2105.00752
Autor:
Gahoi, Amit, Kataria, Satender, Driussi, Francesco, Venica, Stefano, Pandey, Himadri, Esseni, David, Selmi, Luca, Lemme, Max C.
Publikováno v:
Advanced Electronic Materials 6 (10), 2000386, 2020
The accurate extraction and the reliable, repeatable reduction of graphene - metal contact resistance (R$_{C}$) are still open issues in graphene technology. Here, we demonstrate the importance of following clear protocols when extracting R$_{C}$ usi
Externí odkaz:
http://arxiv.org/abs/2008.03218
Autor:
Massarotto, Marco, Driussi, Francesco, Affanni, Antonio, Lancaster, Suzanne, Slesazeck, Stefan, Mikolajick, Thomas, Esseni, David
Publikováno v:
In Solid State Electronics February 2023 200
Publikováno v:
In Solid State Electronics August 2022 194
Akademický článek
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Autor:
Vaziri, Sam, Smith, Anderson D., Östling, Mikael, Lupina, Grzegorz, Dabrowski, Jarek, Lippert, Gunther, Driussi, Francesco, Venica, Stefano, Di Lecce, Valerio, Gnudi, Antonio, König, Matthias, Ruhl, Günther, Belete, Melkamu, Lemme, Max C.
Publikováno v:
Solid State Communications 224, 64-75, 2015
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indica
Externí odkaz:
http://arxiv.org/abs/1509.01025
Akademický článek
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