Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Driesch, N. von den"'
Autor:
Kutovyi, Y., Jansen, M. M., Qiao, S., Falter, C., Driesch, N. von den, Brazda, T., Demarina, N., Trellenkamp, S., Bennemann, B., Grützmacher, D., Pawlis, A.
Isolated impurity states in epitaxially grown semiconductor systems possess important radiative features such as distinct wavelength emission with a very short radiative lifetime and low inhomogeneous broadening which makes them promising for the gen
Externí odkaz:
http://arxiv.org/abs/2205.10109
Autor:
Verbiest, G. J., Goldsche, M., Sonntag, J., Khodkov, T., Driesch, N. von den, Buca, D., Stampfer, C.
Coupled nanomechanical resonators are interesting for both fundamental studies and practical applications as they offer rich and tunable oscillation dynamics. At present, the mechanical coupling in such systems is often mediated by a fixed geometry,
Externí odkaz:
http://arxiv.org/abs/2005.05358
Autor:
Elbaz, A., Buca, D., Driesch, N. Von den, Pantzas, K., Patriarche, G., Zerounian, N., Herth, E., Checoury, X., Sauvage, S., Sagnes, I., Foti, A., Ossikovski, R., Hartmann, J. -M., Boeuf, F., Ikonic, Z., Boucaud, P., Grutzmacher, D., Kurdi, M. El
GeSn alloys are the most promising semiconductors for light emitters entirely based on group IV elements. Alloys containing more than 8 at.% Sn have fundamental direct band-gaps, similar to conventional III-V semiconductors and thus can be employed f
Externí odkaz:
http://arxiv.org/abs/2001.04927
Autor:
Verbiest, G. J., Janssen, H., Xu, D., Ge, X., Goldsche, M., Sonntag, J., Khodkov, T., Banszerus, L., Driesch, N. von den, Buca, D., Watanabe, K., Taniguchi, T., Stampfer, C.
Publikováno v:
Review of Scientific Instruments 90, 084706 (2019)
We developed an impedance bridge that operates at cryogenic temperatures (down to 60 mK) and in perpendicular magnetic fields up to at least 12 T. This is achieved by mounting a GaAs HEMT amplifier perpendicular to a printed circuit board containing
Externí odkaz:
http://arxiv.org/abs/1901.05769
Autor:
Goldsche, M., Verbiest, G. J., Khodkov, T., Sonntag, J., Driesch, N. von den, Buca, D., Stampfer, C.
We report on the fabrication and characterization of an optimized comb-drive actuator design for strain-dependent transport measurements on suspended graphene. We fabricate devices from highly p-doped silicon using deep reactive ion etching with a ch
Externí odkaz:
http://arxiv.org/abs/1804.03871
Autor:
Goldsche, M., Sonntag, J., Khodkov, T., Verbiest, G., Reichardt, S., Neumann, C., Ouaj, T., Driesch, N. von den, Buca, D., Stampfer, C.
There are a number of theoretical proposals based on strain engineering of graphene and other two-dimensional materials, however purely mechanical control of strain fields in these systems has remained a major challenge. The two approaches mostly use
Externí odkaz:
http://arxiv.org/abs/1711.04505
Autor:
Verbiest, G. J., Xu, D., Goldsche, M., Khodkov, T., Barzanjeh, S., Driesch, N. von den, Buca, D., Stampfer, C.
Publikováno v:
Appl. Phys. Lett. 109, 143507 (2016)
We present a microelectromechanical system, in which a silicon beam is attached to a comb-drive actuator, that is used to tune the tension in the silicon beam, and thus its resonance frequency. By measuring the resonance frequencies of the system, we
Externí odkaz:
http://arxiv.org/abs/1607.04406
Autor:
Volmer, F., Drögeler, M., Maynicke, E., Driesch, N. von den, Boschen, M. L., Güntherodt, G., Stampfer, C., Beschoten, B.
Publikováno v:
Phys. Rev. B 90, 165403 (2014)
By successive oxygen treatments of graphene non-local spin-valve devices we achieve a gradual increase of the contact resistance area products ($R_cA$) of Co/MgO spin injection and detection electrodes and a transition from linear to non-linear chara
Externí odkaz:
http://arxiv.org/abs/1408.1427
Autor:
Volmer, F., Drögeler, M., Maynicke, E., Driesch, N. von den, Boschen, M. L., Güntherodt, G., Beschoten, B.
Publikováno v:
Phys. Rev. B 88, 161405(R) (2013)
We investigate spin and charge transport in both single and bilayer graphene non-local spin-valve devices. Similar to previous studies on bilayer graphene, we observe an inverse dependence of the spin lifetime on the carrier mobility in our single la
Externí odkaz:
http://arxiv.org/abs/1305.6484
Publikováno v:
2D Materials; Jul2021, Vol. 8 Issue 3, p1-8, 8p
