Zobrazeno 1 - 10
of 363
pro vyhledávání: '"Dries van Thourhout"'
Autor:
Chao Pang, Yu-hao Deng, Ezat Kheradmand, Luis Moreno Hagelsieb, Yujie Guo, David Cheyns, Pieter Geiregat, Zeger Hens, Dries Van Thourhout
Publikováno v:
APL Photonics, Vol 9, Iss 6, Pp 066113-066113-12 (2024)
Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 µm wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots present a promising solution here, offer
Externí odkaz:
https://doaj.org/article/f2f1ddbcad8e4953b16bbe096aceee4b
Autor:
Gunther Roelkens, Jing Zhang, Laurens Bogaert, Emadreza Soltanian, Maximilien Billet, Ali Uzun, Biwei Pan, Yang Liu, Evangelia Delli, Dongbo Wang, Valeria Bonito Oliva, Lam Thi Ngoc Tran, Xin Guo, He Li, Senbiao Qin, Konstantinos Akritidis, Ye Chen, Yu Xue, Margot Niels, Dennis Maes, Max Kiewiet, Tom Reep, Tom Vanackere, Tom Vandekerckhove, Isaac Luntadila Lufungula, Jasper De Witte, Luis Reis, Stijn Poelman, Ying Tan, Hong Deng, Wim Bogaerts, Geert Morthier, Dries Van Thourhout, Bart Kuyken
Publikováno v:
APL Photonics, Vol 9, Iss 1, Pp 010901-010901-19 (2024)
We present the current state of the art in micro-transfer printing for heterogeneously integrated silicon photonic integrated circuits. The versatility of the technology is highlighted, as is the way ahead to make this technology a key enabler for ne
Externí odkaz:
https://doaj.org/article/1f0973bf00e54315b87932cddb83289c
Autor:
Jef Van Asch, Ahmed Kandeel, Junwen He, Jeroen Missinne, Peter Bienstman, Dries Van Thourhout, Geert Van Steenberge, Joris Van Campenhout
Publikováno v:
JPhys Photonics, Vol 6, Iss 4, p 045013 (2024)
We present an elegant and effective approach for the design of adiabatic waveguide couplers tailored for the heterogeneous integration of photonic building blocks. This method empowers users to incorporate the shortest taper(s) in their designs, whil
Externí odkaz:
https://doaj.org/article/5b47f2939cd846beadb8702d08fa241e
Autor:
Nithin Poonkottil, Hannes Rijckaert, Khannan Rajendran, Robin R. Petit, Lisa I. D. J. Martin, Dries Van Thourhout, Isabel Van Driessche, Christophe Detavernier, Jolien Dendooven
Publikováno v:
Advanced Materials Interfaces, Vol 10, Iss 9, Pp n/a-n/a (2023)
Abstract Area selective atomic layer deposition (AS‐ALD) is an interesting bottom‐up approach due to its self‐aligned fabrication potential. Ruthenium dioxide (RuO2) is an important material for several applications, including microelectronics,
Externí odkaz:
https://doaj.org/article/2499b452b0d1431b854c12172bf67dbc
Autor:
Ruijuan Tian, Xuetao Gan, Chen Li, Xiaoqing Chen, Siqi Hu, Linpeng Gu, Dries Van Thourhout, Andres Castellanos-Gomez, Zhipei Sun, Jianlin Zhao
Publikováno v:
Light: Science & Applications, Vol 11, Iss 1, Pp 1-10 (2022)
We report a waveguide-integrated BP/MoTe2 PN heterojunction photodetector. It presents ultralow dark currents and high responsivities, which has potentials to develop high-performance on-chip photodetectors for various photonic integrated circuits.
Externí odkaz:
https://doaj.org/article/a9aac91c5d0b4db1aa66d6c969787d30
Autor:
Pieter Geiregat, Carmelita Rodá, Ivo Tanghe, Shalini Singh, Alessio Di Giacomo, Delphine Lebrun, Gianluca Grimaldi, Jorick Maes, Dries Van Thourhout, Iwan Moreels, Arjan J. Houtepen, Zeger Hens
Publikováno v:
Light: Science & Applications, Vol 10, Iss 1, Pp 1-11 (2021)
Abstract 2D materials are considered for applications that require strong light-matter interaction because of the apparently giant oscillator strength of the exciton transitions in the absorbance spectrum. Nevertheless, the effective oscillator stren
Externí odkaz:
https://doaj.org/article/7521215a8c004f03822ca26d44e50a84
Autor:
Hitesh Agarwal, Bernat Terrés, Lorenzo Orsini, Alberto Montanaro, Vito Sorianello, Marianna Pantouvaki, Kenji Watanabe, Takashi Taniguchi, Dries Van Thourhout, Marco Romagnoli, Frank H. L. Koppens
Publikováno v:
Nature Communications, Vol 12, Iss 1, Pp 1-6 (2021)
Here, three-dimensional hafnium oxide and two-dimensional hexagonal boron nitride are integrated in the insulating section of double-layer graphene optical modulators, leading to a maximum bandwidth of 39 GHz and enhanced modulation efficiency.
Externí odkaz:
https://doaj.org/article/2f9cae4941a94a54a2d5dac781458da8
Autor:
Frédéric Peyskens, Chitraleema Chakraborty, Muhammad Muneeb, Dries Van Thourhout, Dirk Englund
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
Integration of photonic circuits with single photon emitters provides a promising route towards scalable quantum photonic chips. Here, the authors integrate a WSe2 monolayer onto a SiN chip and demonstrate the coupling of single photon emitters in WS
Externí odkaz:
https://doaj.org/article/3f2d9fe8590147baa65e6fab3b0892b3
Autor:
Koen Alexander, John P. George, Jochem Verbist, Kristiaan Neyts, Bart Kuyken, Dries Van Thourhout, Jeroen Beeckman
Publikováno v:
Nature Communications, Vol 9, Iss 1, Pp 1-6 (2018)
Active devices such as modulators made of silicon nitride still lack performance. Here, the authors demonstrate electro-optic modulators based on ferroelectric lead zirconate titanate films on silicon nitride, in both the O- and the C-band with a mod
Externí odkaz:
https://doaj.org/article/d793d590739d490098298ac8b35f9755
Autor:
Jing Zhang, Grigorij Muliuk, Joan Juvert, Sulakshna Kumari, Jeroen Goyvaerts, Bahawal Haq, Camiel Op de Beeck, Bart Kuyken, Geert Morthier, Dries Van Thourhout, Roel Baets, Guy Lepage, Peter Verheyen, Joris Van Campenhout, Agnieszka Gocalinska, James O’Callaghan, Emanuele Pelucchi, Kevin Thomas, Brian Corbett, António José Trindade, Gunther Roelkens
Publikováno v:
APL Photonics, Vol 4, Iss 11, Pp 110803-110803-10 (2019)
Silicon photonics (SiPh) enables compact photonic integrated circuits (PICs), showing superior performance for a wide variety of applications. Various optical functions have been demonstrated on this platform that allows for complex and powerful PICs
Externí odkaz:
https://doaj.org/article/fa68af41d5e340cf9bbc4a85837a42dd