A 2.0 /spl mu/m cutoff wavelength separate absorption, charge, and multiplication layer avalanche photodiode using strain-compensated InGaAs quantum wells.

Autor: Dries, J.C., Gokhale, M.R., Forrest, S.R., Olsen, G.H.

Publikováno v: Conference Proceedings Eleventh International Conference on Indium Phosphide & Related Materials (IPRM'99) (Cat No99CH36362); 1999, p397-400, 4p

Monolithic integration of laser and waveguide using a twin-guide structure with absorption layer.

Autor: Studenkov, P., Gokhale, M., Xu, L., Dries, J.C., Chao, C.-P., Garbuzov, D., Forrest, S.R.

Publikováno v: Conference Proceedings 1997 International Conference on Indium Phosphide & Related Materials; 1997, p669-672, 4p

High speed optoelectronic InP/InGaAs logic pixel.

Autor: Dong-Su Kim, Dries, J.C., Gokhale, M., Forrest, S.R.

Publikováno v: Conference Proceedings 1997 International Conference on Indium Phosphide & Related Materials; 1997, p479-482, 4p

Photodetector arrays from 100 mm diameter InGaAs/InP epitaxial wafers

Autor: Olsen, G.H. ^*, Dixon, P.E., Lange, M.J., Sudol, J.J., Cohen, M.J., Sugg, A.R., Dries, J.C.

Publikováno v: In Journal of Crystal Growth 2001 222(4):693-696

13.3 W quasi-continuous operation of 0.99 µm wavelength SCH-QW InGaAs/GaAs/InGaP broadened waveguide lasers.

Autor: Garbuzov, D.Z., Gokhale, M.R., Dries, J.C., Studenkov, P., Martinelli, R.U., Connolly, J.C., Forrest, S.R.

Publikováno v: Electronics Letters (Institution of Engineering & Technology); 08/14/1997, Vol. 33 Issue 17, p1462-1464, 3p