Enabling GaN based MicroLEDs using leading-edge single wafer MOCVD technology (Conference Presentation)

Autor: Rudy Parekh, Bumjoon Kim, Soo Min Lee, Swaminathan Srinivasan, Drew Hanser, Anil Vijayendran

Publikováno v: Light-Emitting Devices, Materials, and Applications XXVII.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b44b903ab36e8140b5d8beb613c0ce32
https://doi.org/10.1117/12.2651315

High performance MOCVD for micro LED applications

Autor: Ajit P. Paranjpe, Bumjoon Kim, Eric A. Armour, Drew Hanser, Bojan Mitrovic, Soo Min Lee, Terry Toh, Mark McKee, Ronald A. Arif

Publikováno v: Light-Emitting Devices, Materials, and Applications XXV.

Veeco MOCVD solutions are capable of supporting multiple substrates (GaAs, InP, sapphire, Si), and offer seamless transition to larger substrate sizes. For 6” GaAs red micro LED, Lumina® has demonstrated total population wavelength yield of >95% i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2d386e9dd1918206ec73ef7ca91c6e21
https://doi.org/10.1117/12.2578842

List of Contributors

Autor: Rafik Addou, Arto Aho, Aaron M. Andrews, Richardella Anthony, Donat J. As, Vitaliy Avrutin, Gavin R. Bell, Sergio Bietti, Victor Blinov, Andrea Castellano, Laurent Cerutti, Kevin Clark, Charles Cornet, Mickaël Da Silva, Phillip Dang, Hermann Detz, Molly Doran, Olivier Durand, Stephen Farrell, I.A. Fischer, Everett Fraser, Alex Freundlich, Alexandre Garreau, Mircea Guina, Teemu Hakkarainen, Drew Hanser, Isaac Hernández-Calderón, Christopher L. Hinkle, Yoshiji Horikosh, Alex Ignatiev, Sergey V. Ivanov, Roland Jäger, Valentin N. Jmerik, Shane R. Johnson, Yung-Chung Kao, Nobuyuki Koguchi, Xufeng Kou, Jenn-Ming Kuo, Naohiro Kuze, François Lelarge, Christophe Levallois, Juan Li, Wei Li, Klaus Lischka, Joao Marcelo Jordao Lopes, Donald MacFarland, Karine Madiomanana, Matthew Marek, Zetian Mi, Hadis Morkoç, Maksym Myronov, Grégoire Narcy, Dmitrii V. Nechaev, Tianxiao Nie, Alexander Nikiforov, Jiro Nishinaga, Samarth Nitin, Gang Niu, Kunishige Oe, M. Oehme, Mark O’Steen, Ümit Özgür, Oleg Pchelyakov, Paul Pinsukanjana, Dmitry Pridachin, Eric Readinger, Jean-Baptiste Rodriguez, Guillaume Saint-Girons, Stefano Sanguinetti, Stephen T. Schaefer, Achim Schöll, Andreas Schramm, Frank Schreiber, Werner Schrenk, J. Schulze, Irina V. Sedova, Arvind J. Shalindar, Aidong Shen, Ichiro Shibasaki, Leonid Sokolov, Sergey V. Sorokin, Gunther Springholz, Gottfried Strasser, Jianshi Tang, Eric Tournié, Kevin Vargason, Dominique Vignaud, Jukka Viheriälä, Bertrand Vilquin, Suresh Vishwanath, Robert M. Wallace, Lee A. Walsh, Kang L. Wang, Shu M. Wang, Preston T. Webster, Huili G. Xing, Faxian Xiu, Masahiro Yoshimoto, Tobias Zederbauer, Songrui Zhao

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::906b622bf9aa2dc954e18d9ee0b85c6b
https://doi.org/10.1016/b978-0-12-812136-8.00049-9

Guest Editorial Special Section on the 2018 International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH)

Autor: Drew Hanser, Patrick Fay

Publikováno v: IEEE Transactions on Semiconductor Manufacturing. 31:411-412

As guest editors for the special section on the 2018 International Conference on Compound Semiconductor Manufacturing Technology (CS-MANTECH), we are pleased to present IEEE Transactions on Semiconductor Manufacturing readers with a selection of pape

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::be493c37867188e5a80295d53ebaaa27
https://doi.org/10.1109/tsm.2018.2873469

Characterization of GaInN/GaN layers for green emitting laser diodes

Autor: Yufeng Li, Drew Hanser, Christian Wetzel, Mingwei Zhu, Peter D. Persans, Stephanie Tomasulo, Y. Xia, Lianghong Liu, Theeradetch Detchprohm, J. Senawiratne

Publikováno v: Journal of Crystal Growth. 311:2942-2947

An enhancement of radiative recombination in GaInN/GaN heterostructures is being pursued by a reduction of defects associated with threading dislocations and a structural control of piezoelectric polarization in the active light-emitting regions. Fir

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e03c2dec2848437711cad1592dd2929f
https://doi.org/10.1016/j.jcrysgro.2009.01.067