Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Drew Garvin Keppel"'
Autor:
Emma Tevaarwerk, O. M. Castellini, Drew Garvin Keppel, S.T. Utley, Mark A. Eriksson, Max G. Lagally, P. Rugheimer, Donald E. Savage
Publikováno v:
Applied Physics Letters. 80:4626-4628
A variation of electric force microscopy (EFM) is used to measure the electrical isolation of SiGe quantum dots (QDs). The SiGe QDs are grown on mesas of ultrathin silicon on insulator. Near the mesa edges, the thin silicon layer has been incorporate
Autor:
Drew Garvin Keppel, Pengpeng Zhang, Donald E. Savage, Bradley J. Larson, O. M. Castellini, Mark A. Eriksson, Bin Yang, Matthew S. Marcus, J. M. Simmons, Max G. Lagally, Zhiwei Li
Publikováno v:
Applied Physics Letters. 86:263107
We demonstrate a way to direct carbon nanotube growth using Si nanocrystals that are self-ordered via the thermal decomposition of thin silicon-on-insulator substrates. The Si nanocrystals are about 90nm wide and 100–150nm tall, with 200nm spacing.
Publikováno v:
Review of Scientific Instruments. 76:053707
Quantitative electric force microscopy (EFM) is usually restricted to flat samples, because vertical sample topography traditionally makes quantitative interpretation of EFM data difficult. Many important samples, including self-assembled nanostructu