Zobrazeno 1 - 10
of 762
pro vyhledávání: '"Dreau A"'
Autor:
Durand, Alrik, Baron, Yoann, Udvarhelyi, Péter, Cache, Félix, R., Krithika V., Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Hartmann, Jean-Michel, Reboh, Shay, Abbarchi, Marco, Robert-Philip, Isabelle, Gali, Adam, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs
Among the wealth of single fluorescent defects recently detected in silicon, the G center catches interest for its telecom single-photon emission that could be coupled to a metastable electron spin triplet. The G center is a unique defect where the s
Externí odkaz:
http://arxiv.org/abs/2404.15069
Autor:
Durand, Alrik, Baron, Yoann, Cache, Félix, Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Hartmann, Jean-Michel, Reboh, Shay, Abbarchi, Marco, Robert-Philip, Isabelle, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs
Publikováno v:
Physical Review B 110, 2 (2024)
Among the wide variety of single fluorescent defects investigated in silicon, numerous studies have focused on color centers with a zero-phonon line around $1.28 \mu$m and identified to a common carbon-complex in silicon, namely the G center. However
Externí odkaz:
http://arxiv.org/abs/2402.07705
Autor:
Lefaucher, Baptiste, Jager, Jean-Baptiste, Calvo, Vincent, Cache, Félix, Durand, Alrik, Jacques, Vincent, Robert-Philip, Isabelle, Cassabois, Guillaume, Baron, Yoann, Mazen, Frédéric, Kerdilès, Sébastien, Reboh, Shay, Dréau, Anaïs, Gérard, Jean-Michel
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched
Externí odkaz:
http://arxiv.org/abs/2310.18121
Autor:
Li, H., Johra, H., Pereira, F. de Andrade, Hong, T., Dreau, J. Le, Maturo, A., Wei, M., Liu, Y., Saberi-Derakhtenjani, A., Nagy, Z., Marszal-Pomianowska, A., Finn, D., Miyata, S., Kaspar, K., Nweye, K., Neill, Z. O, Pallonetto, F., Dong, B.
Publikováno v:
Applied Energy 2023, Volume 343
Energy flexibility, through short-term demand-side management (DSM) and energy storage technologies, is now seen as a major key to balancing the fluctuating supply in different energy grids with the energy demand of buildings. This is especially impo
Externí odkaz:
http://arxiv.org/abs/2211.12252
Autor:
Lefaucher, B., Jager, J. -B., Calvo, V., Durand, A., Baron, Y., Cache, F., Jacques, V., Robert-Philip, I., Cassabois, G., Herzig, T., Meijer, J., Pezzagna, S., Khoury, M., Abbarchi, M., Dréau, A., Gérard, J. -M.
Publikováno v:
Appl. Phys. Lett. 122, 061109 (2023)
We report successful incorporation of an ensemble of G centers in silicon-on-insulator (SOI) microrings using ion implantation and conventional nanofabrication. The coupling between the emitters and the resonant modes of the microrings is studied usi
Externí odkaz:
http://arxiv.org/abs/2210.05485
Publikováno v:
In Applied Energy 15 January 2025 378 Part A
Publikováno v:
A&A 668, A115 (2022)
In the 90's, theoretical studies motivated the use of the asymptotic-giant branch bump (AGBb) as a standard candle given the weak dependence between its luminosity and stellar metallicity. Because of the small size of observed asymptotic-giant branch
Externí odkaz:
http://arxiv.org/abs/2207.00571
Autor:
Yu, Jie, Khanna, Shourya, Themessl, Nathalie, Hekker, Saskia, Dréau, Guillaume, Gizon, Laurent, Bi, Shaolan
Asteroseismology has become widely accepted as a benchmark for accurate and precise fundamental stellar properties. It can therefore be used to validate and calibrate stellar parameters derived from other approaches. Meanwhile, one can leverage large
Externí odkaz:
http://arxiv.org/abs/2206.00046
Autor:
Baron, Yoann, Durand, Alrik, Herzig, Tobias, Khoury, Mario, Pezzagna, Sébastien, Meijer, Jan, Robert-Philip, Isabelle, Abbarchi, Marco, Hartmann, Jean-Michel, Reboh, Shay, Gérard, Jean-Michel, Jacques, Vincent, Cassabois, Guillaume, Dréau, Anaïs
Publikováno v:
Applied Physics Letters 121, 084003 (2022)
We report the fabrication of G centers in silicon with an areal density compatible with single photon emission at optical telecommunication wavelengths. Our sample is made from a silicon-on-insulator wafer which is locally implanted with carbon ions
Externí odkaz:
http://arxiv.org/abs/2204.13521
Autor:
Haykal, A., Tanos, R., Minotto, N., Durand, A., Fabre, F., Li, J., Edgar, J. H., Ivady, V., Gali, A., Michel, T., Dréau, A., Gil, B., Cassabois, G., Jacques, V.
Publikováno v:
Nature Communications 13, 4347 (2022)
Spin defects in hexagonal boron nitride (hBN) are promising quantum systems for the design of flexible two-dimensional quantum sensing platforms. Here we rely on hBN crystals isotopically enriched with either $^{10}$B or $^{11}$B to investigate the i
Externí odkaz:
http://arxiv.org/abs/2112.10176