Zobrazeno 1 - 10
of 38
pro vyhledávání: '"Drazek, C."'
Autor:
Gyani, J., Valenza, M., Soliveres, S., Martinez, F., Le Royer, C., Augendre, E., Romanjek, K., Drazek, C.
Publikováno v:
In Solid State Electronics 2009 53(12):1268-1272
Autor:
Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Bulsara, M.T., Fitzgerald, E.A., Urteaga, M., Ha, W., Bergman, J., Brar, B., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E., Clark, D., Smith, D., Thompson, R.F., Drazek, C., Daval, N.
Publikováno v:
In Journal of Crystal Growth 2009 311(7):1979-1983
Autor:
Tibbits, T.N.D., Beutel, P., Grave, M., Karcher, C., Oliva, E., Siefer, G., Wekkeli, A., Schachtner, M., Dimroth, F., Bett, A.W., Krause, R., Piccin, M., Blanc, N., Muñoz-Rico, M., Arena, C., Guiot, E., Charles-Alfred, C., Drazek, C., Janin, F., Farrugia, L., Hoarau, B., Wasselin, J., Tauzin, A., Signamarcheix, T., Hannappel, T., Schwarzburg, K., Dobrich, A.
29th European Photovoltaic Solar Energy Conference and Exhibition; 1975-1978
Triple-junction (3J) solar cells will soon be history. The next generation of multi-junction (MJ) devices are now reaching efficiencies far beyond the record levels of
Triple-junction (3J) solar cells will soon be history. The next generation of multi-junction (MJ) devices are now reaching efficiencies far beyond the record levels of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a765bd55ca4480ea55c7addc10dd0ddb
Autor:
Dimroth, F., Grave, M., Beutel, P., Fiedeler, U., Karcher, C., Tibbits, T.N.D., Oliva, E., Siefer, G., Schachtner, M., Wekkeli, A., Bett, A.W., Krause, R., Piccin, M., Drazek, C., Guiot, E., Ghyselen, B., Salvetat, T., Tauzin, A., Signamarcheix, T., Dobrich, A., Hannappel, T., Schwarzburg, K., Blanc, N.
Triple-junction solar cells from III-V compound semiconductors have thus far delivered the highest solar-electric conversion efficiencies. Increasing the number of junctions generally offers the potential to reach even higher efficiencies, but materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::ce9652b50029a48886fa41527b723b15
https://publica.fraunhofer.de/handle/publica/235768
https://publica.fraunhofer.de/handle/publica/235768
Autor:
Kazior, T.E., LaRoche, J.R., Urteaga, M., Bergman, J., Choe, M.J., Lee, K.J., Seong, T., Seo, M., Yen, A., Lubyshev, D., Fastenau, J.M., Liu, W.K., Smith, D., Clark, D., Thompson, R., Bulsara, M.T., Fitzgerald, E.A., Drazek, C., Guiot, E.
Publikováno v:
2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS); 2010, p1-4, 4p
Autor:
Lubyshev, D., Fastenau, J. M., Wu, Y., Synder, A., Liu, W. K., Bulsara, M. T., Fitzgerald, E. A., Urteaga, M., Ha, W., Bergman, J., Choe, M. J., Brar, B., Hoke, W. E., LaRoche, J. R., Torabi, A., Kazior, T. E., Smith, D., Clark, D., Thompson, R. F., Drazek, C.
Publikováno v:
MRS Online Proceedings Library; 2009, Vol. 1194 Issue 1, p1-9, 9p
Autor:
Kazior, T.E., LaRoche, J.R., Lubyshev, D., Fastenau, J.M., Liu, W.K., Urteaga, M., Ha, W., Bergman, J., Choe, M.J., Bulsara, M.T., Fitzgerald, E.A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., Augendre, E.
Publikováno v:
2009 IEEE MTT-S International Microwave Symposium Digest; 2009, p1113-1116, 4p
Autor:
Kazior, T.E., LaRoche, J.R., Lubyshev, D., Fastenau, J.M., Liu, W.K., Urteaga, M., Ha, W., Bergman, J., Choe, M.J., Bulsara, M.T., Fitzgerald, E.A., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., Augendre, E.
Publikováno v:
2009 IEEE International Conference on Indium Phosphide & Related Materials; 2009, p100-104, 5p
Autor:
Gyani, J., Soliveres, S., Martinez, F., Valenza, M., Le Royer, C., Augendre, E., Romanjek, K., Drazek, C.
Publikováno v:
2009 10th International Conference on Ultimate Integration of Silicon; 2009, p87-90, 4p
Autor:
Fitzgerald, E.A., Bulsara, M.T., Bai, Y., Cheng, C., Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Urtega, M., Ha, W., Bergman, J., Brar, B., Drazek, C., Daval, N., Letertre, F., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E.
Publikováno v:
2008 9th International Conference on Solid-State & Integrated-Circuit Technology; 2008, p1421-1424, 4p