Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Dragos Seghete"'
Autor:
Todd E. Harvey, Steven M. George, Aric W. Sanders, Kristine A. Bertness, Dragos Seghete, Paul T. Blanchard, Norman A. Sanford
Publikováno v:
IEEE Transactions on Nanotechnology. 11:479-482
We report novel metal-oxide-semiconductor field effect transistors (MOSFETs) based on individual gallium nitride (GaN) nanowires with fully conformal cylindrical gates. The W/Al2O3 gates were deposited by atomic layer deposition. Reverse-bias breakdo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0ff728529b5b95e8bb13a9a3d72f6ec7
https://doi.org/10.1109/tnano.2011.2177993
https://doi.org/10.1109/tnano.2011.2177993
Autor:
Byoung H. Lee, A. I. Abdulagatov, Steven M. George, Robert A. Hall, Zachary M. Gibbs, Byunghoon Yoon, Dragos Seghete, Younghee Lee
Publikováno v:
Atomic Layer Deposition of Nanostructured Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e28451ee7524fd9febc9713095ece3fd
https://doi.org/10.1002/9783527639915.ch5
https://doi.org/10.1002/9783527639915.ch5
Publikováno v:
Sensors and Actuators A: Physical. 166:269-276
In this paper we present a novel low-temperature, CMOS compatible, top-down nanofabrication process employing ALD tungsten (WALD) as a structural material for nano-electro-mechanical systems (NEMS). Using this process, doubly-clamped suspended NEMS s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce1d4cf5bddc6a0746d77b66955d926d
https://doi.org/10.1016/j.sna.2009.07.022
https://doi.org/10.1016/j.sna.2009.07.022
Publikováno v:
Chemistry of Materials. 23:1668-1678
Mo ALD has been demonstrated by fluorosilane elimination chemistry using MoF6 and Si2H6 as the reactants. The nucleation and growth characteristics of Mo ALD were investigated using a variety of in situ and ex situ techniques in both high vacuum and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60bdc085f8fb5d127ac1b545ee837125
https://doi.org/10.1021/cm101673u
https://doi.org/10.1021/cm101673u
Publikováno v:
Thin Solid Films. 519:3612-3618
A special slit doser is used to form near unit steps in the spatial profile of an Al2O3 ALD film thickness. The unit step is formed as the Al2O3 ALD occurs mainly downstream from the slit doser because the trimethylaluminum and H2O reactants are entr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7607899cdc24d7f2c79a416b847dca87
https://doi.org/10.1016/j.tsf.2011.01.285
https://doi.org/10.1016/j.tsf.2011.01.285
Autor:
Ronggui Yang, Steven M. George, Dragos Seghete, Yadong Zhang, Zachary M. Gibbs, Yung-Cheng Lee, Andrew S. Cavanagh, A. I. Abdulagatov
Publikováno v:
Surface and Coatings Technology. 205:3334-3339
The film perfection in terms of pinhole defect densities of ultra-thin Al2O3 grown by atomic layer deposition (ALD) has been quantitatively characterized. A significant defect density reduction from ~ 1.2 × 105/cm2 to ~ 90/cm2 was demonstrated for 2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba968122c1cf6dd633e61239a8523e5b
https://doi.org/10.1016/j.surfcoat.2010.12.001
https://doi.org/10.1016/j.surfcoat.2010.12.001
Autor:
Victor M. Bright, M. Dalberth, Dragos Seghete, Steven M. George, Charles T. Rogers, Kristine A. Bertness, Jason M. Gray, J. R. Montague, Norman A. Sanford
Publikováno v:
Sensors and Actuators A: Physical. 165:59-65
Gallium nitride nanowires (GaN-NWs) are systems of interest for mechanical resonance-based sensors due to their small mass and, in the case of c -axis NWs, high mechanical quality ( Q ) factors of 10,000–100,000. We report on singly-clamped NW mech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b899f5c9e2b382beef17da11e18932c
https://doi.org/10.1016/j.sna.2010.03.014
https://doi.org/10.1016/j.sna.2010.03.014
Publikováno v:
Langmuir. 26:19045-19051
Hybrid organic-inorganic films were grown by molecular layer deposition (MLD) with a three-step ABC reaction sequence using (A) trimethylaluminum (TMA), (B) ethanolamine (EA), and (C) maleic anhydride (MA) at 90 °C. Very large steady state mass gain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ccd919e3b529c5aaf8bb9788527b23d
https://doi.org/10.1021/la102649x
https://doi.org/10.1021/la102649x
Publikováno v:
Chemistry of Materials. 21:5365-5374
Thin film growth using molecular layer deposition (MLD) or atomic layer deposition (ALD) is based on sequential, self-limiting surface reactions. In this work, MLD is used to grow a hybrid organic−inorganic polymer film based on a three-step ABC re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::667d259fea1ca4300d02e6b1bb2e6212
https://doi.org/10.1021/cm9013267
https://doi.org/10.1021/cm9013267
Autor:
Steven M. George, Victor M. Bright, Dragos Seghete, Robert A. Hall, Yuan-Jen Chang, B.D. Davidson
Publikováno v:
Sensors and Actuators A: Physical. 155:8-15
A molecular layer deposition approach is reported that produces a new class of hybrid organic–inorganic thin films. These films have very low densities, and display typical atomic layer deposition characteristics: controllable linear growth, confor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4d23f807ad58d89d0b43e5d86b624dc
https://doi.org/10.1016/j.sna.2008.12.016
https://doi.org/10.1016/j.sna.2008.12.016