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Autor:
Liang-Yu Chen, Philip G. Neudeck, Laura J. Evans, Drago Androjna, Andrew J. Trunek, David J. Spry, Gary W. Hunter
Publikováno v:
Materials Science Forum. :1199-1202
This paper reports on initial results from the first device tested of a “second generation” Pt-SiC Schottky diode hydrogen gas sensor that: 1) resides on the top of atomically flat 4H-SiC webbed cantilevers, 2) has integrated heater resistor, and