Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Dražen Radić"'
Publikováno v:
Microscopy and Microanalysis 29(2023), 189-195
Fluctuation electron microscopy (FEM) analyzes intensity fluctuations within diffraction patterns in order to draw conclusions regarding the structure of amorphous materials by calculating the normalized variance V(k,R). Ideally, such experiments onl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::92e94c0d3d1f3949a04ed05d9414e865
https://www.hzdr.de/publications/Publ-36147-1
https://www.hzdr.de/publications/Publ-36147-1
Publikováno v:
Microscopy and Microanalysis 29(2023), 477-489
Variable resolution fluctuation electron microscopy experiments were performed on self-ion implanted amorphous silicon and amorphous germanium to analyze the medium-range order. The results highlight that the commonly used pair-persistence analysis i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::17953b4c4b33b537feb602dd0d6e432f
https://www.hzdr.de/publications/Publ-36691-1
https://www.hzdr.de/publications/Publ-36691-1
Publikováno v:
Microscopy and Microanalysis 28(2022), 2036-2046
This work investigates how knock-on displacements influence fluctuation electron microscopy (FEM) experiments. FEM experiments were conducted on amorphous silicon, formed by self-ion implantation, in a transmission electron microscope at 300 kV and 6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5d606d9c36f36c6f813067a76ad9097
https://pubmed.ncbi.nlm.nih.gov/36047128
https://pubmed.ncbi.nlm.nih.gov/36047128
Publikováno v:
Microscopy and Microanalysis. 27:828-834
A focused ion beam (FIB) technique describing the preparation of specimens for in situ thermal and electrical transmission electron microscopy is presented in detail. The method can be applied to a wide range of materials and allows the sample to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1433a89a3b549f2138edd4675d3a1b42
https://doi.org/10.1017/s1431927621012022
https://doi.org/10.1017/s1431927621012022
Autor:
Hartmut Bracht, Sven Hilke, Matthias Posselt, Martin Peterlechner, Gerhard Wilde, Dražen Radić
Publikováno v:
Microscopy and Microanalysis 26(2020), 1100-1109
Variable-resolution fluctuation electron microscopy (VR-FEM) data from measurements on amorphous silicon and PdNiP have been obtained at varying experimental conditions. Measurements have been conducted at identical total electron dose and with an id
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c16aa8419168ed39ad534b40bf804d8d
https://doi.org/10.1017/s143192762002440x
https://doi.org/10.1017/s143192762002440x
Publikováno v:
Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 27(4)
A focused ion beam (FIB) technique describing the preparation of specimens for in situ thermal and electrical transmission electron microscopy is presented in detail. The method can be applied to a wide range of materials and allows the sample to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::237114dddde4e50ed09fe39240eec8f7
https://pubmed.ncbi.nlm.nih.gov/34266507
https://pubmed.ncbi.nlm.nih.gov/34266507
Publikováno v:
Journal of Applied Physics 126(2019), 095707
The medium range order of self-ion-implanted amorphous silicon was studied by variable resolution fluctuation electron microscopy and characterized by the normalized variance V ( k , R ). The ion-implantation was conducted at sequentially increasing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bb36c47d446aa8b09887a634b64937c7
https://www.hzdr.de/publications/Publ-29676-1
https://www.hzdr.de/publications/Publ-29676-1
Publikováno v:
AIP Advances, Vol 12, Iss 11, Pp 115325-115325-11 (2022)
Based on recent calculations of the self-diffusion (SD) coefficient in amorphous silicon (a-Si) by classical Molecular Dynamics simulation [Posselt et al., J. Appl. Phys. 131, 035102 (2022)], detailed investigations on atomic mechanisms are performed
Externí odkaz:
https://doaj.org/article/17d4cee2a4cd4b649d88f9f20cdcea72