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pro vyhledávání: '"Dr I. Hema Latha"'
Publikováno v:
International Journal of Electrical and Electronics Research. 10:806-810
High speed and low power dissipation devices are expected from future generation technology of Nano-electronic devices. Tunnel field effect transistor (TFET) technology is unique to the prominent devices in low power applications. To minimize leakage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31309c59384ba48c4fdaae4f148ce04d
https://doi.org/10.37391/ijeer.100407
https://doi.org/10.37391/ijeer.100407
