Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Doyle Craig Capell"'
Publikováno v:
IEEE Transactions on Electron Devices. 50:774-784
Various design issues pertaining to SiC-based IGBTs are described. A trench gate, p-channel IGBT was considered the most appropriate structure for fabrication in SiC. The fabrication and characterization of high temperature SiC IGBTs with high curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab5a9ed4523b149bc36e35be08e9b51a
https://doi.org/10.1109/ted.2003.811388
https://doi.org/10.1109/ted.2003.811388
Publikováno v:
IEEE Transactions on Electron Devices. 50:471-478
Planar 4H-SiC accumulation channel field effect transistor (ACCUFET) have been designed, fabricated, and characterized. Detailed design and processing experiments were conducted on relatively large area ACCUFETs to boost their power ratings. A detail
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e5c8fe1b97ce78d15ac8d3df5a32f55
https://doi.org/10.1109/ted.2002.808511
https://doi.org/10.1109/ted.2002.808511
Autor:
Robert Callanan, Doyle Craig Capell, Brett Hull, Michael James Paisley, Jim Richmond, Qingchun Zhang, Michael J. O'Loughlin, F. Husna, Mrinal K. Das, Adrian Powell
Publikováno v:
2008 20th International Symposium on Power Semiconductor Devices and IC's.
Rapidly improving 4 H-SiC material quality and a maturing MOS process/design have enabled the development of the largest 10 kV MOSFET to date and the first 10 kV n-IGBT capable of flowing 10 A and 4 A, respectively, with very low on- resistances. Wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d5f1bfecbcd3ef71d7e8433075c7cdc3
https://doi.org/10.1109/ispsd.2008.4538946
https://doi.org/10.1109/ispsd.2008.4538946