Advanced doping and millisecond annealing for ultra-shallow junctions for 65 nm and beyond.

Autor: McCoy, S.P., Arevalo, E.A., Gelpey, J.C., Downey, D.F.

Publikováno v: 12th IEEE International Conference on Advanced Thermal Processing of Semiconductors, 2004. RTP 2004; 2004, p99-108, 10p

Dependence of junction depth and sheet resistance on the thermal budget in the low temperature pre-stabilization regime.

Autor: Bayha, B., Paul, S., Lerch, W., Downey, D.F., Arevalo, E.A., Hebras, X., Cherkashin, N.

Publikováno v: Proceedings of the 14th International Conference on Ion Implantation Technology, 2002; 2002, p618-621, 4p

Production worthy repeatability of spike anneals.

Autor: Paul, S., Bayha, B., Lerch, W., Merkl, C., Downey, D.F., Arevalo, E.A.

Publikováno v: Proceedings of the 14th International Conference on Ion Implantation Technology, 2002; 2002, p83-86, 4p

The significance of controlling “off-axis” (from 1-0-0) oriented Si wafers during high angle implants.

Autor: Downey, D.F., Arevalo, E.A., Eddy, R.J., Lerch, W., Loeffelmacher, D., Ostermeir, R.

Publikováno v: 2000 International Conference on Ion Implantation Technology Proceedings Ion Implantation Technology - 2000 (Cat. No.00EX432); 2000, p642-645, 4p

The influence of “off-axis” from (100) oriented Si wafers on junction depth and sheet resistance for low-energy implantation and rapid thermal annealing.

Autor: Lerch, W., Downey, D.F., Arevalo, E.A., Ostermeir, R.

Publikováno v: 2000 International Conference on Ion Implantation Technology Proceedings Ion Implantation Technology - 2000 (Cat. No.00EX432); 2000, p186-190, 5p