Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Douglas Van Den Broeke"'
Autor:
Jo Finders, Douglas Van Den Broeke, Jungchul Park, Stephen Hsu, Bert Vleeming, Robert John Socha, Geert Vandenberghe, Mircea Dusa, J. Fung Chen, Joost Bekaert, Eric Hendrickx, Vincent Wiaux, Anton van Oosten, Peter Nikolsky
Publikováno v:
SPIE Proceedings.
Double patterning technology (DPT) is a promising technique that bridges the anticipated technology gap from the use of 193nm immersion to EUV for the half-pitch device node beyond 45nm. The intended mask pattern is formed by two independent patterni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::389bf4f1aa5e2428cdf004cf19735aab
https://doi.org/10.1117/12.692921
https://doi.org/10.1117/12.692921
Publikováno v:
SPIE Proceedings.
factors around 0.3. Double dipole lithography (DDL) is becoming a popular RET candidate for foundries and memory makers to pattern the poly gate active layer [2, 3, 4]. Double exposure method or double pattern technique (DPT), [5, 6, 7] using ternary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32a31bed960fcb5eb624c313026a6d6f
https://doi.org/10.1117/12.681854
https://doi.org/10.1117/12.681854
Autor:
Uwe Hollerbach, Douglas Van Den Broeke, Thomas Laidig, J. Fung Chen, Stephen Hsu, Michael Hsu
Publikováno v:
SPIE Proceedings.
For advance semiconductor manufacturing, patterning contact and via mask layers continue to be major challenge. As a result, RET's beyond the current standard 6% attPSM technology are being pursued with a goal of reducing the k 1 for hole patterning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d77a3b98288782808d52d8a070a4256a
https://doi.org/10.1117/12.681811
https://doi.org/10.1117/12.681811
Publikováno v:
SPIE Proceedings.
The technical challenges in using F2 lithography for the 45nm node, along with the insurmountable difficulties in EUV lithography, has driven the semiconductor chipmaker into the low k 1 lithography era under the pressure of ever decreasing feature s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b11527ec539a0c09e493c001846bfb2b
https://doi.org/10.1117/12.633231
https://doi.org/10.1117/12.633231
Autor:
Michael C. W. Hsu, Douglas Van Den Broeke, Jungchul Park, Jang Fung Cupertino Chen, Stephen Hsu
Publikováno v:
SPIE Proceedings.
There are many challenges ahead to use ArF for printing 45nm node device. High numerical aperture (NA) exposure tool and double exposure technique (DET) are the promising methods to extend ArF lithography manufacturing to 45nm node at k 1 factor belo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84e4d7d56039de63b0f08981ddb8e9bb
https://doi.org/10.1117/12.617451
https://doi.org/10.1117/12.617451
Autor:
Jang Fung Cupertino Chen, Stephen Hsu, Thomas Laidig, Uwe Hollerbach, Jungchul Park, Ting Chen, Xuelong Shi, Keith Gronlund, Robert John Socha, Sangbong Park, Douglas Van Den Broeke, Michael C. W. Hsu, Kurt E. Wampler
Publikováno v:
SPIE Proceedings.
With immersion and hyper numerical aperture (NA>1) optics apply to the ITRS 2003/4 roadmap scenario (Figure 1); it is very clear that the IC manufacturing has already stepped into the final frontier of optical lithography. Today’s advanced lithogra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcca599b59275212b712b9717dd3e1d1
https://doi.org/10.1117/12.617430
https://doi.org/10.1117/12.617430
Autor:
J. Fung Chen, Douglas Van Den Broeke, Michael Hsu, Kurt E. Wampler, Xuelong Shi, Thomas Laidig, Stephen Hsu
Publikováno v:
SPIE Proceedings.
Low k1 lithography process enables the production of 90nm and 65nm nodes by introducing advanced resolution enhancement technology (RET) mask with complex layout. To ensure the printed wafer outcome that meets the original IC design specifications, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5445efbe1c8c4debad68963d67da44dc
https://doi.org/10.1117/12.568670
https://doi.org/10.1117/12.568670
Autor:
Douglas Van Den Broeke, Bryan Reese, Stephen Hsu, Larry S. Zurbrick, Bryan S. Kasprowicz, Anthony Vacca, Darren Taylor
Publikováno v:
SPIE Proceedings.
CPL Technology is a promising resolution enhancement technique (RET) to increase the lithography process window at small feature line widths 1-4 . Successful introduction of a reticle based RET needs to address several reticle manufacturing areas.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::429b69e655ae3017e74cc4ee33e7bf76
https://doi.org/10.1117/12.569287
https://doi.org/10.1117/12.569287
Autor:
Joost Bekaert, Douglas Van Den Broeke, Robert John Socha, Vicky Philipsen, Geert Vandenberghe, Rik Jonckheere
Publikováno v:
SPIE Proceedings.
Different types of phase-shift masks (PSM) in combination with the proper illumination condition are widely used to allow 193nm lithography to print ever-decreasing pitches with a sufficient process window. A viable option for the 65nm node is Chrome
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ededed118fe8780100c2e5aa2deef1d6
https://doi.org/10.1117/12.568694
https://doi.org/10.1117/12.568694
Autor:
Douglas Van Den Broeke, J. Fung Chen, Bryan S. Kasprowicz, Andrew J. Merriam, Stephen Hsu, James J. Jacob
Publikováno v:
SPIE Proceedings.
The recent introduction of chromeless-phase lithography (CPL) has provided lithographers with a powerful wavefrontengineering tool for patterning at k 1 values below 0.3. Reliable image formation at such extreme k 1 requires a well-characterized CPL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb6e807c32ca528f89e10e544de52d07
https://doi.org/10.1117/12.569274
https://doi.org/10.1117/12.569274