Zobrazeno 1 - 10
of 55
pro vyhledávání: '"Douglas Van Den Broeke"'
Autor:
Jo Finders, Douglas Van Den Broeke, Jungchul Park, Stephen Hsu, Bert Vleeming, Robert John Socha, Geert Vandenberghe, Mircea Dusa, J. Fung Chen, Joost Bekaert, Eric Hendrickx, Vincent Wiaux, Anton van Oosten, Peter Nikolsky
Publikováno v:
SPIE Proceedings.
Double patterning technology (DPT) is a promising technique that bridges the anticipated technology gap from the use of 193nm immersion to EUV for the half-pitch device node beyond 45nm. The intended mask pattern is formed by two independent patterni
Publikováno v:
SPIE Proceedings.
factors around 0.3. Double dipole lithography (DDL) is becoming a popular RET candidate for foundries and memory makers to pattern the poly gate active layer [2, 3, 4]. Double exposure method or double pattern technique (DPT), [5, 6, 7] using ternary
Autor:
Uwe Hollerbach, Douglas Van Den Broeke, Thomas Laidig, J. Fung Chen, Stephen Hsu, Michael Hsu
Publikováno v:
SPIE Proceedings.
For advance semiconductor manufacturing, patterning contact and via mask layers continue to be major challenge. As a result, RET's beyond the current standard 6% attPSM technology are being pursued with a goal of reducing the k 1 for hole patterning
Publikováno v:
SPIE Proceedings.
The technical challenges in using F2 lithography for the 45nm node, along with the insurmountable difficulties in EUV lithography, has driven the semiconductor chipmaker into the low k 1 lithography era under the pressure of ever decreasing feature s
Autor:
Michael C. W. Hsu, Douglas Van Den Broeke, Jungchul Park, Jang Fung Cupertino Chen, Stephen Hsu
Publikováno v:
SPIE Proceedings.
There are many challenges ahead to use ArF for printing 45nm node device. High numerical aperture (NA) exposure tool and double exposure technique (DET) are the promising methods to extend ArF lithography manufacturing to 45nm node at k 1 factor belo
Autor:
Jang Fung Cupertino Chen, Stephen Hsu, Thomas Laidig, Uwe Hollerbach, Jungchul Park, Ting Chen, Xuelong Shi, Keith Gronlund, Robert John Socha, Sangbong Park, Douglas Van Den Broeke, Michael C. W. Hsu, Kurt E. Wampler
Publikováno v:
SPIE Proceedings.
With immersion and hyper numerical aperture (NA>1) optics apply to the ITRS 2003/4 roadmap scenario (Figure 1); it is very clear that the IC manufacturing has already stepped into the final frontier of optical lithography. Today’s advanced lithogra
Autor:
Joost Bekaert, Douglas Van Den Broeke, Robert John Socha, Vicky Philipsen, Geert Vandenberghe, Rik Jonckheere
Publikováno v:
SPIE Proceedings.
Different types of phase-shift masks (PSM) in combination with the proper illumination condition are widely used to allow 193nm lithography to print ever-decreasing pitches with a sufficient process window. A viable option for the 65nm node is Chrome
Autor:
Douglas Van Den Broeke, J. Fung Chen, Bryan S. Kasprowicz, Andrew J. Merriam, Stephen Hsu, James J. Jacob
Publikováno v:
SPIE Proceedings.
The recent introduction of chromeless-phase lithography (CPL) has provided lithographers with a powerful wavefrontengineering tool for patterning at k 1 values below 0.3. Reliable image formation at such extreme k 1 requires a well-characterized CPL
Autor:
Keith Gronlund, Douglas Van Den Broeke, J. Fung Chen, Stephen Hsu, Linda Yu, Jungchul Park, Sean Park, Armin Liebchen, Ting Chen
Publikováno v:
SPIE Proceedings.
We describe a new resist model calibration procedure and its implementation in LithoCruiser TM . In addition to the resist calibration, LithoCruiser is used to perform simultaneous optimization for numerical aperture (NA), mask OPC, and illumination
Autor:
Thomas Laidig, Robert John Socha, Uwe Hollerbach, Jungchul Park, Noel Corcoran, Kurt E. Wampler, Xuelong Shi, Douglas Van Den Broeke, Stephen Hsu, Mircea Dusa, J. Fung Chen
Publikováno v:
SPIE Proceedings.
For advance semiconductor manufacturing, imaging contact and via layers continues to be a major challenge for 65nm node lithography and beyond. As a result, much effort is being placed on reducing the k 1 for hole patterning to the range of 0.35 - 0.