Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Douglas Macintyre"'
Autor:
Martin Christopher Holland, Matthias Passlack, Yee-Chia Yeo, Peter Ramvall, Stephen Thoms, I.G. Thayne, T. Vasen, Douglas Macintyre, R. Droopad, Shyh-Wei Wang, R. Contreras-Guerrero, J.S. Rojas-Ramirez, Richard Kenneth Oxland, Xu Li, Gerben Doornbos, Carlos H. Diaz, Chang Yen-An, S. W. Chang
Publikováno v:
IEEE Electron Device Letters. 37:261-264
We report the first demonstration of InAs FinFETs with fin width $\textrm {W}_{{\mathrm{fin}}}$ in the range 25–35 nm, formed by inductively coupled plasma etching. The channel comprises defect-free, lattice-matched InAs with fin height $\textrm {H
Autor:
Timothy Vasen, Yang-Sih Chang, Stephen Thoms, Gordon C. H. Hsieh, Peter Ramvall, Yee-Chia Yeo, Gerben Doornbos, S. Wang, Chien-Hsun Wang, Georgios Vellianitis, Richard Kenneth Oxland, Carlos H. Diaz, Martin Christopher Holland, Xu Li, Iain G. Thayne, Kaimin M. Yin, Douglas Macintyre, Shang-Wen Chang, Ravi Droopad, M. Edirisooriya, Matthias Passlack, R. Contreras-Guerrero, J.S. Rojas-Ramirez
Publikováno v:
IEEE Transactions on Electron Devices. 62:2429-2436
Frequency (100 ${\rm Hz}\le f \le 1$ MHz) and temperature ( $- 50 \le T \le 20^{\circ }\text{C}$ ) characteristics of low interface state density $D_{\rm {it}}$ high- $\kappa $ gate-stacks on n-InAs have been investigated. Capacitance–voltage ( $C$
Publikováno v:
Microelectronic Engineering. 121:153-155
This paper reports a simple route to fabricating T-gate like structures with footprint of 40nm using a copper electroplating process and a single electron beam lithography step without the need for lift-off. To our knowledge, these are the smallest s
Autor:
Richard M. De La Rue, Martin D. Dawson, Faiz Rahman, Nigel P. Johnson, Keith P. Parsons, Ali Z. Khokhar, David Massoubre, Steve J. Abbott, Martin Tillin, Martin D. B. Charlton, Ian Watson, Douglas Macintyre, C. Xiong, Zheng Gong, Graham Hubbard, Erdan Gu
Publikováno v:
Microelectronic Engineering. 87:2200-2207
We describe a comparison of nanofabrication technologies for the fabrication of 2D photonic crystal structures on GaN/InGaN blue LEDs. Such devices exhibit enhanced brightness and the possibility of controlling the angular emission profile of emitted
Autor:
Martin Christopher Holland, James E. Royer, Joon Lee, Steven Bentley, Iain G. Thayne, Jian Shen, Sun-Ju Lee, Andrew C. Kummel, Wilhelm Melitz, Douglas Macintyre
Publikováno v:
ECS Transactions. 33:97-103
Kelvin probe force microscopy (KPFM) is a unique technique that can provide two dimensional potential profiles inside a working device. A procedure is described to obtain high-resolution KPFM results on ultra-high vacuum (UHV) cleaved III-V MOSCAPs.
Autor:
Matthias Passlack, Hill Richard J, Karol Kalna, Haiping Zhou, Xi Li, Douglas Macintyre, Ravi Droopad, Iain G. Thayne, Asen Asenov, Martin Christopher Holland, Colin Stanley, Stephen Thoms
Publikováno v:
ECS Transactions. 19:275-286
To address issues associated with continual scaling of the International Technology Roadmap for Semiconductors (ITRS) (1) to follow Moore's Law, MOSFETs with high mobility channel materials are now being seriously considered. As a result, there has b
Autor:
Michael J. Strain, R.M. De La Rue, Antonio Samarelli, Stephen Thoms, Marc Sorel, Douglas Macintyre
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 26:2290-2294
In this article the authors report on a new optical linewidth metrology method which uses measured changes in the resonant wavelength of fabricated ring resonator structures to establish the linewidth of waveguides. The technique has a precision of b
Autor:
Douglas Macintyre, Stephen Thoms
Publikováno v:
Microelectronic Engineering. 84:793-796
This paper demonstrates significant improvements in the stitching performance of an electron beam lithography tool by correcting for wafer tilt. This is achieved with no significant increase in writing time. Wafer tilt gives rise to keystone errors i
Publikováno v:
Microelectronic Engineering. 83:1128-1131
This paper describes improvements in high resolution large area e-beam lithography when a thin titanium layer is applied to substrates prior to the application of resist. The technique is particularly useful when there is a requirement to pattern lon
Autor:
Douglas Macintyre, Stephen Thoms
Publikováno v:
Microelectronic Engineering. 83:1051-1054
We describe two new test structures for measuring overlay and stitch errors in electron beam lithography. They can be read by eye to a resolution of 2.5nm using a simple optical microscope. By using some image analysis the accuracy can be improved to