Zobrazeno 1 - 10
of 98
pro vyhledávání: '"Douglas C. Hopkins"'
Autor:
Subhashish Bhattacharya, Ramandeep Narwal, Suyash Sushilkumar Shah, B. Jayant Baliga, Aditi Agarwal, Ajit Kanale, Kijeong Han, Douglas C. Hopkins, Tzu-Hsuan Cheng
Publikováno v:
IEEE Power Electronics Magazine. 10:39-43
Publikováno v:
IEEE Journal of Emerging and Selected Topics in Power Electronics. 10:3652-3661
Solid State Transformers (SSTs) are developing as highly efficient interfaces in renewable energy, transport, and energy storage systems. However, performance limitations, such as overvoltage sensitivity and fault handling capabilities, have slowed w
Publikováno v:
IMAPSource Proceedings. 2022
Wide Bandgap devices (WBG) have led to an era of high speed and high voltage operations that were not previously achievable with silicon devices. However, packaging of these devices in the power module has been a challenge due to higher switching rat
Publikováno v:
2023 IEEE Applied Power Electronics Conference and Exposition (APEC).
Publikováno v:
IEEE Transactions on Power Electronics. 36:13057-13066
In a power module the parasitic inductance limits the dynamic high-frequency performance, and the area of the cooling surfaces limits the power capability. This article presents a new 3-D power electronic design methodology based on the concept of mu
Publikováno v:
International Symposium on Microelectronics. 2021:000382-000389
Direct Bonded Copper (DBC) is the most popular solution for conventional high-power modules because of superior thermal/electrical/mechanical performance and mature manufacturing. To meet the rising demand of power density and power rating, a Double-
Autor:
Ajit Kanale, Tzu-Hsuan Cheng, Ramandeep Narwal, Aditi Agarwal, B. Jayant Baliga, Subhashish Bhattacharya, Douglas C. Hopkins
Publikováno v:
2022 IEEE Energy Conversion Congress and Exposition (ECCE).
Autor:
Kenji Nishiguchi, Subhashish Bhattacharya, Douglas C. Hopkins, B. Jayant Baliga, Tzu-Hsuan Cheng, Yoshi Fukawa
Publikováno v:
Journal of Microelectronics and Electronic Packaging. 18:123-136
Wide-Band Gap (WBG) power devices have become a promising option for high-power applications due to the superior material properties over traditional Silicon. To not limit WBG devices’ mother nature, a rugged and high-performance power device packa
Autor:
Subhashish Bhattacharya, B. Jayant Baliga, Douglas C. Hopkins, Kenji Nishiguchi, Tzu-Hsuan Cheng, Yoshi Fukawa
Publikováno v:
International Symposium on Microelectronics. 2020:000277-000281
Silicon-Carbide (SiC) power devices have become a promising option for traditional Silicon (Si) due to the superior material properties. To fully take advantage of the SiC devices, a high-performance power device packaging solution is necessary. This
Autor:
Tzu Hsuan Cheng, B. Jayant Baliga, Ajit Kanale, Kijeong Han, Subhashish Bhattacharya, Douglas C. Hopkins
Publikováno v:
Materials Science Forum. 1004:872-881
Bidirectional power switches are used in matrix-or cyclo-converters and in multistage inverter circuits to facilitate high-frequency AC-to-AC conversion. A new 1.2 kV bidirectional MOSFET (BiDFET) with low on-resistance is achieved and demonstrated u