Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Doug Tweet"'
Publikováno v:
Applied optics. 55(8)
We have developed an approach for designing a dichroic coating to optimize performance of current-matched multijunction photovoltaic cells while diverting unused light. By matching the spectral responses of the photovoltaic cells and current matching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::611ba2f17ca407ec02d6a8dfb3ad9322
https://pubmed.ncbi.nlm.nih.gov/26974772
https://pubmed.ncbi.nlm.nih.gov/26974772
Autor:
Wei Ching Huang, Chen Hao Chiang, Edward Yi Chang, Doug Tweet, Kung Liang Lin, Tien Tung Luong, Yuen Yee Wong, Tingkai Li, Yu Lin Hsiao
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:473-477
GaN film grown on Si substrate using multilayer AlN/AlxGa1−xN buffer is studied by the low-pressure metal-organic chemical-vapor deposition method. The AlxGa1−xN films with Al composition varying from 1 to 0.66 were used to accommodate the stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6d281d293c5dba39917bbd0532ee1d4
https://doi.org/10.1116/1.3385672
https://doi.org/10.1116/1.3385672
Autor:
Jer-shen Maa, Jui Chien Huang, Doug Tweet, Wei Ching Huang, Edward Yi Chang, Yu Lin Hsiao, Sheng Teng Hsu, Tingkai Li, Chen Hao Chiang, Kung Liang Lin
Publikováno v:
physica status solidi c. 5:1536-1538
High quality GaN films were successfully grown on Si (111) substrates using the MOVPE method and a multilayer AlN buffer. The buffer layer film quality and thickness are critical for the growth of the crack-free GaN film on Si (111) substrates. Crack
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::709389904d885e87fa100d84cb53c37a
https://doi.org/10.1002/pssc.200778454
https://doi.org/10.1002/pssc.200778454
Autor:
Tingkai Li, Sheng Teng Hsu, Kung Liang Lin, Ching-Ting Lee, Wei Ching Huang, Edward Yi Chang, Yu Lin Hsiao, Jer-shen Maa, Doug Tweet
Publikováno v:
Applied Physics Letters. 91:222111
High quality GaN film was successfully grown on 150mm Si (111) substrate by metal-organic vapor phase epitaxy method using AlN multilayer combined with graded AlGaN layer as buffer. The buffer layer structure, film quality, and film thickness are cri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd8a1176e8fb6f5c5fd6a9b4fed7f0d3
https://doi.org/10.1063/1.2818675
https://doi.org/10.1063/1.2818675