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pro vyhledávání: '"Doug N. Jamba"'
Publikováno v:
Journal of Crystal Growth. 127:365-370
Electrical doping of II–VI compound semiconductors is a major issue in MBE growth, especially the p-type doping. In this paper, we will report on the molecular beam epitaxial growth and properties of In- (n-type) and As- (p-type) doped HgCdTe alloy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a52df27f0d4bab12b05b25d524cba40
https://doi.org/10.1016/0022-0248(93)90640-i
https://doi.org/10.1016/0022-0248(93)90640-i
