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pro vyhledávání: '"Doug H. Lee"'
Autor:
Michael P. Belyansky, Doug H. Lee, Ming Cai, Stephan Waidmann, Brian J. Greene, Karthik Ramani, Frank D. Tamweber, William K. Henson
Publikováno v:
IEEE Transactions on Electron Devices. 57:1706-1709
Strain effects from stress liners on silicon-on-insulator MOSFETs with high-k dielectric and metal gate (HKMG) are reported. By thoroughly evaluating their impact on drive current, mobility, and threshold voltage, the intrinsic performance gain of st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f919de56bdc974ac92284c03ee0e895
https://doi.org/10.1109/ted.2010.2049076
https://doi.org/10.1109/ted.2010.2049076
