Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Doug C. H. Yu"'
Autor:
Chang Chih-Yang, T. L. Shao, Doug C. H. Yu, J. Y. Wang, Chung-Jung Wu, W. H. Lin, C. H. Tung, S. T. Hsiao
Publikováno v:
VLSI Circuits
A direct silicon water cooling solution using fusion bonded silicon lid is proposed. It is successfully demonstrated as an effective cooling solution with total power >2600 W on a single SoC, equivalent to power density of 4.8 W/mm2. Low temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f94e6c01c773a34aaa3564af8db4029
https://doi.org/10.23919/vlsicircuits52068.2021.9492489
https://doi.org/10.23919/vlsicircuits52068.2021.9492489
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
5G and AI technologies are widely applied to highly connected world across cloud, network and edge applications. The compute and bandwidth of high performance computing (HPC) systems such as supercomputer, data center and high-end servers are constan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7887771017c10b9c9e5e5c845e16c865
https://doi.org/10.1109/ectc32696.2021.00029
https://doi.org/10.1109/ectc32696.2021.00029
Autor:
Kuo-Chung Yee, Doug C. H. Yu
Publikováno v:
2020 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
Data centric era has come and prevails across cloud, networking and edge applications. AI and 5G applications, such as intelligent manufacturing, AR/VR, connected devices and smart cars, are generating an explosion of data. This deluge of data demand
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42ea96b6bbaf651e7a716afbf82d465c
https://doi.org/10.1109/vlsi-tsa48913.2020.9203661
https://doi.org/10.1109/vlsi-tsa48913.2020.9203661
Autor:
Wu Kai-Chiang, Kun-You Lin, C.H. Tsai, Che-Wei Hsu, Lu Chun-Lin, H. Wang, C. T. Wang, Doug C. H. Yu, K. Y. Kao, C. S. Liu, Tang Tzu-Chun, Tzong-Lin Wu, Pu Han-Ping
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
A high performance 3D dipole antenna with metal thickness >100 μm for wide bandwidth and lateral radiation is realized on InFO package. 25 % wide fractional bandwidth, from 60 to 77 GHz, has been obtained. The beamforming capability of the antenna a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b78780a82f2cd3aa0d37cb2e6073fe2e
https://doi.org/10.1109/iedm19573.2019.8993591
https://doi.org/10.1109/iedm19573.2019.8993591
Autor:
Wu Kai-Chiang, Chung-Hao Tsai, Tang Tzu-Chun, Doug C. H. Yu, Chung-Shi Liu, Che-Wei Hsu, Chuei-Tang Wang, Pu Han-Ping, Chia-Chia Lin, Lu Chun-Lin
Publikováno v:
2019 Electrical Design of Advanced Packaging and Systems (EDAPS).
High Q-factor (quality factor) 3D solenoid inductor formed by RDL (redistribution layer) and copper via in the molding compound on InFO package was fabricated. The effect of the turns and cross sectional area on Q-factor is discussed. The 3D solenoid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c5ab65c83e3becf688654525e1270b8
https://doi.org/10.1109/edaps47854.2019.9011648
https://doi.org/10.1109/edaps47854.2019.9011648
Publikováno v:
2019 Symposium on VLSI Technology.
The electrical characterization of System on Integrated Chips (SoIC™), an innovative 3D heterogeneous integration technology manufactured in front-end of line with known-good-die is reported. Chiplets integration of devices including foundry leadin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a5a4594ea6c100f054a28ed0539d2c8
https://doi.org/10.23919/vlsit.2019.8776486
https://doi.org/10.23919/vlsit.2019.8776486
Autor:
Jeng-Shien Hsieh, C.H. Yu, Doug C. H. Yu, Liang-Ju Yen, Hsieh Ching-Hua, Cheng-chieh Hsieh, Chang Wang, C. S. Liu, Victor C. Y. Chang, K. C. Yee
Publikováno v:
2018 IEEE 68th Electronic Components and Technology Conference (ECTC).
In the era of IoT, everything is connected through mutual data communication. System designers keep raising the bar for faster data transmission speed and wider data bandwidth to meet the ever-increasing data transmission demands from clouds computin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e4bb3968add83d6a034710cf5c468b7
https://doi.org/10.1109/ectc.2018.00093
https://doi.org/10.1109/ectc.2018.00093
Publikováno v:
MRS Bulletin. 40:257-263
With the electronics packaging industry shifting increasingly to three-dimensional packaging, microbumps have been adopted as the vertical interconnects between chips. Consequently, solder volumes have decreased dramatically, and the solder thickness
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3194290165cd33a1bc5f97eb3259b73f
https://doi.org/10.1557/mrs.2015.29
https://doi.org/10.1557/mrs.2015.29
Autor:
Victor C. Y. Chang, Kai-Yuan Ting, Shang-Yun Hou, Vincent Wei, T. H. Yu, Doug C. H. Yu, C. T. Wang, Chun-Yu Wu, S. Y. Huang, W. Chris Chen, Clark Hu
Publikováno v:
2017 Symposium on VLSI Technology.
State-of-the-art silicon interposer technology of chip-on-wafer-on-substrate (CoWoS®) has been applied for the first time in fabricating high performance wafer level system-in-package (WLSiP) containing the 2nd-generation high bandwidth memory (HBM2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::669fb8fbd4dd06329048899bd8c9a695
https://doi.org/10.23919/vlsit.2017.7998198
https://doi.org/10.23919/vlsit.2017.7998198
Autor:
W. H. Lin, Yi-Li Hsiao, Doug C. H. Yu, S. T. Hsiao, Hsu-Hsien Chen, T. L. Shao, C. H. Tung, Chung-Jung Wu
Publikováno v:
2017 IEEE 67th Electronic Components and Technology Conference (ECTC).
To improve the latency and bandwidth performance for future high performance computing application, a sub-micron electrical interconnection composed of metal capping layer with sub-micron thickness on typical copper CMP (chemical mechanical polish) B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::796dd1c16fe3a5148fccd18282725d4f
https://doi.org/10.1109/ectc.2017.22
https://doi.org/10.1109/ectc.2017.22