Zobrazeno 1 - 10
of 677
pro vyhledávání: '"Double-Gate MOSFET"'
Publikováno v:
SN Applied Sciences, Vol 5, Iss 4, Pp 1-12 (2023)
Abstract This research work designs a prototype of an active-loaded differential amplifier using Double-Gate (DG) MOSFETs. The following text outlines the prototype design with testing in developing the conceptual understanding of the differential am
Externí odkaz:
https://doaj.org/article/b51c395c8fb64b7f90843f4cc3cf20e7
Akademický článek
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Publikováno v:
SN Applied Sciences, Vol 4, Iss 8, Pp 1-15 (2022)
Article Highlights The Double-Gate (DG) MOSFET has been used to design an active-loaded differential amplifier by building common electronic systems. The design process has been outlined to achieve parameters (avoiding mathematical models) using simu
Externí odkaz:
https://doaj.org/article/de2c198243a84a469470069dcb825fca
Autor:
Billel Smaani, Yacin Meraihi, Fares Nafa, Mohamed Salah Benlatreche, Hamza Akroum, Saida Latreche
Publikováno v:
International Journal of Electronics and Telecommunications, Vol vol. 67, Iss No 4, Pp 609-614 (2021)
This paper deals with the implementation of a DC and AC double-gate MOSFET compact model in the Verilog- AMS language for the transient simulation and the configuration of ultra low-power analog circuits. The Verilog-AMS description of the proposed m
Externí odkaz:
https://doaj.org/article/801d92be4f4a4a41bea17e5acb0cfa05
Akademický článek
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Publikováno v:
Tecnología en Marcha, Pp ág 10-16 (2021)
Aluminium Gallium Arsenide (AlGaAs) is a semiconductor material used in the latest design of double heterostructure laser diodes. This semiconductor is mostly available in the arbitrary alloy form between Gallium Arsenide and Aluminium Arsenide. It i
Externí odkaz:
https://doaj.org/article/24b0984ce15c48f4b0bb9d6eeab6e472
Autor:
Singh, Ajay Kumar
Publikováno v:
COMPEL -The international journal for computation and mathematics in electrical and electronic engineering, 2019, Vol. 38, Issue 2, pp. 815-828.
Autor:
Fernando Avila Herrera, Yoko Hirano, Takahiro Iizuka, Mitiko Miura-Mattausch, Hideyuki Kikuchihara, Dondee Navarro, Hans Jurgen Mattausch, Akira Ito
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1293-1301 (2019)
A novel compact model has been developed, which considers the origin of the short-channel effect (SCE) on the basis of the potential distribution along the channel. Thus an enlargement of the insight into SCE suppression in advanced thin-layer MOSFET
Externí odkaz:
https://doaj.org/article/1d060eb085884fa4be2db5c018e96eaf
Publikováno v:
Nanomaterials, Vol 12, Iss 19, p 3374 (2022)
In this work, three-dimensional modeling of the surface potential along the cylindrical surrounding double-gate (CSDG) MOSFET is proposed. The derived surface potential is used to predict the values of electron mobility along the length of the device
Externí odkaz:
https://doaj.org/article/4671221239094990b30830d575ae85f1
Autor:
Meysam Zareiee, Mahsa Mehrad
Publikováno v:
مجله مدل سازی در مهندسی, Vol 16, Iss 53, Pp 149-155 (2018)
Metal Oxide Semiconductor Field Effect Transistor (MOSFET) plays a key role in electronic industry in recent years. Among MOSFETs, double gate (DG) transistor is an important device. During last decade, many efforts have been accomplished to improve
Externí odkaz:
https://doaj.org/article/9a6c466ca076435288d108d00de6cca7