Zobrazeno 1 - 10
of 37
pro vyhledávání: '"Double polysilicon"'
Publikováno v:
2016 IEEE International Nanoelectronics Conference (INEC).
This paper related the irradiation reliability properties exhibited by double polysilicon self aligned (DPSA) bipolar junction transistors (BJTs). Gummel curses, leakage current of junction and breakdown voltage were measured before and after 60Co γ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b22b8c5da3d12e13592086189408a3b2
https://doi.org/10.1109/inec.2016.7589292
https://doi.org/10.1109/inec.2016.7589292
Publikováno v:
Microelectronics Reliability. 45:1167-1173
DC and low frequency noise measurements have been carried out for double polysilicon NPN bipolar transistors. Our experiments have highlighted unexpected geometrical dependencies for the base saturation current density and low frequency noise. A mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6272a1b76ced4fbd743abf6339f760d0
https://doi.org/10.1016/j.microrel.2004.12.012
https://doi.org/10.1016/j.microrel.2004.12.012
Autor:
A. Monroy, Alain Chantre, B. Martinet, C. Fellous, J. Mourier, Helene Baudry, G Troillard, F Romagna, Michel Marty, Didier Dutartre, M. Laurens
Publikováno v:
Materials Science and Engineering: B. 89:21-25
This paper describes a high performance heterojunction bipolar transistor using a low complexity double polysilicon architecture. Non selective Si/SiGe epitaxy was selected for the base formation, allowing higher manufacturability than for a selectiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73df2ce68e68fc7b0ae574c3a1e9d161
https://doi.org/10.1016/s0921-5107(01)00784-x
https://doi.org/10.1016/s0921-5107(01)00784-x
Publikováno v:
IEEE Transactions on Electron Devices. 45:439-446
An analytical model describing the DC voltage and current distributed effects in the polysilicon and intrinsic base regions of long stripe BJTs with double polysilicon technology is presented. It is shown that the bias dependent debiasing effect in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8becb80c66a32c2b683962c2f228494c
https://doi.org/10.1109/16.658678
https://doi.org/10.1109/16.658678
Publikováno v:
IEEE Transactions on Electron Devices. 43:889-897
In situ phosphorus-doped polysilicon emitter (IDP) technology for very high-speed, small-emitter bipolar transistors is studied. The device characteristics of IDP transistors are evaluated and compared with those of conventional ion-implanted polysil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8dfbca5c54980fca42b7c9576112872
https://doi.org/10.1109/16.502120
https://doi.org/10.1109/16.502120
Autor:
T. Nakamura, H. Nishizawa
Publikováno v:
IEEE Transactions on Electron Devices. 42:390-398
Recent developments in high speed silicon bipolar device technologies are reviewed. Bipolar device structures that include polysilicon are key technologies for improving circuit characteristics. Double polysilicon bipolar device structures, in partic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::814375440f08543b2eb73b3e0f9e25f6
https://doi.org/10.1109/16.368034
https://doi.org/10.1109/16.368034
Autor:
A.C.-K. Chan, Mansun Chan
Publikováno v:
IEEE Electron Device Letters. 24:75-77
The floating-body effect of nonvolatile memory cells fabricated using partially depleted silicon-on-insulator (SOI) technology has been investigated using two-dimensional numerical device simulation. Compared with similar bulk devices, the floating-b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55c2ee5c6901ef1a9def2eafb9e82a0a
https://doi.org/10.1109/led.2003.808840
https://doi.org/10.1109/led.2003.808840
Autor:
Hans Mertens, Ihor Brunets, S. Van Huylenbroeck, Tony Vanhoucke, J.J.T.M. Donkers, R. van Dalen, P.H.C. Magnee, F. Vleugels
Publikováno v:
2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM).
This paper describes a self-aligned SiGe heterojunction bipolar transistor (HBT) based on a standard double-polysilicon architecture and nonselective epitaxial growth (i.e. DPSA-NSEG). Emitter-base self-alignment is realized by polysilicon reflow in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a13b235ee1f8b5cb0eab730bceac0a0
https://doi.org/10.1109/bctm.2012.6352615
https://doi.org/10.1109/bctm.2012.6352615
Publikováno v:
Solid-State Electronics
We present an analysis of a modified double-polysilicon SiGe:C HBT module showing a CML ring oscillator gate delay τD of 2.5 ps, and fT/fmax/BVCEo values of 300 GHz/350 GHz/1.85 V (Fox et al., 2008) [1] . A key feature of the HBT module is a connect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::519f2c83ce4350484fe45b8a4f27a058
Autor:
Y. Campidelli, Pascal Chevalier, F. Pourchon, L. Depoyan, Alain Chantre, M. Buczko, G. Troillard, T. Lacave, Didier Celi, Daniel Gloria, G. Avenier, Christophe Gaquiere
Publikováno v:
2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.
This paper summarizes the work carried out to improve performances of a conventional double-polysilicon FSA-SEG SiGe:C HBT towards 400 GHz f MAX . The technological optimization strategy is discussed and electrical characteristics are presented. A re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ba1b59769254ffe4844d54ffbc94eff
https://doi.org/10.1109/bipol.2009.5314250
https://doi.org/10.1109/bipol.2009.5314250